| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-04 | 3818001000 | Silicon is alloyed with a disc-shaped. Dopant (impurity) -Bor (B) .Use AS UPPER ELECTRODE FOR CAMERA SETTINGS pickling REACTIVE ION ETCHING PLASMA OXIDE SILICONE LAM RAINBOW 4520, which is used for VIA ELE | *** | UNITED STATES | 1.2 | 2786,91 | *** | ***** | ***** |
| 2017-09-07 | 3818009000 | INP SUBSTRATE disc-shaped, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY INP SUBSTRATE | *** | CHINA | 0.51 | 4453,74 | *** | ***** | ***** |
| 2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.17 | 3617,25 | *** | ***** | ***** |
| 2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 2 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.03 | 1559,25 | *** | ***** | ***** |
| 2017-09-11 | 3818009000 | CHEMICAL COMPOUNDS DOPED: semiconductor epitaxial layer structure of gallium nitride semi-insulating substrate silicon carbide circular plate with a diameter of 3 inches. It used to build electronic equipment, FOR: FOLLOW | *** | JAPAN | 1.8 | 14024,16 | *** | ***** | ***** |
| 2017-09-12 | 3818009000 | A semiconductor wafer of gallium arsenide-SHAPED discs with a diameter of 50.8 MM is intended for use as a raw material for the manufacture of semiconductor devices ELECTRONICS by spraying and superfine ultrapure semiconductors | *** | UNITED STATES | 1.35 | 1278,38 | Vilnius Lithuania | ***** | ***** |
| 2017-09-12 | 3818001000 | Silicon is alloyed with a plate round shapes of different diameters, for use in electronics for the production of photovoltaic converters and SOLID-STATE ELECTRONIC DEVICES: //-ART.RLM500-01 - 218SHT, ART.RLM501-01 - 216SHT | *** | JAPAN | 27 | 1354,08 | MOSCOW | ***** | ***** |
| 2017-09-20 | 3818001000 | Silicon wafer polishing, doped monocrystalline, electronics; Packed in CARTRIDGES / PO 25 PCS / VACUUM PACKAGES paved cardboard and foam insert: 6 "(150mm) of the plate (Appendix 85), the conductivity type N, DIAM.150 +/- 0.20 | *** | CHINA | 33.44 | 24076,5 | *** | ***** | ***** |
| 2017-09-22 | 3818009000 | EPITAXIAL plate consisting of a substrate GAAS (gallium arsenide), doped silicon (SI) (less than 0.003%) C applied layers ALGAINP, doped SI (silicon) and MG (magnesium) FOR USE IN ELECTRONICS MANUFACTURING IN EPITAXIAL PLATE (D | *** | TAIWAN CHINA | 17.09 | 86690,92 | *** | ***** | ***** |
| 2017-09-23 | 3818009000 | OTHER Chemical elements doped (indium arsenide), intended for use in electronics in the form of discs with a diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box,: idea | *** | CHINA | 5 | 7500 | *** | ***** | ***** |