DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | TRANSISTORS power dissipation LESS THAN 1W. Maximum voltage 30V RESERVOIR: SHENZHEN QIYAO PLASTIC & ELECTRONIC CO, LTD.. MMUN2211LT1 (SOT-23) 1,000 | *** | CHINA | 0.06 | 171,3 | *** | ***** | ***** |
2017-09-01 | 8541210000 | N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit | *** | GERMANY | 0.2 | 639,29 | *** | ***** | ***** |
2017-09-02 | 8541210000 | Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 80 V, the maximum collector current of 1.5 A, power dissipation 0.9W, CASING TO-226-3. LOCATED in the tape is packaged in a plastic bag. : STMICROELECTRON | *** | MALAYSIA | 0.2 | 77,26 | *** | ***** | ***** |
2017-09-02 | 8541210000 | TRANSISTOR SEMICONDUCTOR, SILICON, 2N7002K, drain-source voltage 60V, drain current 380MA, OUTPUT 0.42VT, SIZE 2.9 * 2.4 * 1.0mm, for PROM.SBORKI monitor model LS22D390HSX / RU ART: 0505-003397 SUPER VICTORY ENTERPRISES LIMITED. SUPER VICTORY ENTERPR | *** | CHINA | 5.62 | 730,2 | *** | ***** | ***** |
2017-09-02 | 8541210000 | Transistors SEMICONDUCTOR NOT SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly TVS "SAMSUNG" TRANSISTOR SEMICONDUCTOR, SILICON AP2317GN, drain-source voltage 20V CURRENT stations | *** | CHINA | 0.36 | 689,1 | *** | ***** | ***** |
2017-09-04 | 8541210000 | TRANSISTOR, P / N NX3008NBKS, MOS transistors, the number of channels 2, the breakdown voltage of the drain-source 30, continuous current LEAKAGE 350 MA - 1,4 SOURCE DRAIN RESISTANCE OM VOLTAGE gate-source 8, the minimum operating temperature - 55 C, MAX: Working | *** | PHILIPPINES | 0.24 | 606,13 | *** | ***** | ***** |
2017-09-04 | 8541210000 | TRANSISTOR, P / N BD140-16, a bipolar transistor BJT, the maximum voltage 80 V COLLECTOR emitter, collector voltage BASE 80 V BASE TENSION emitter 5 V, a maximum constant collector current 1,5A, gain-: WIDTH ON | *** | PHILIPPINES | 4.28 | 203,38 | *** | ***** | ***** |
2017-09-04 | 8541210000 | BIPOLAR TRANSISTORS TRANZISTOR- / DATA / -Voltage emitter-base (VEBO) - 5 V, VOLTAGE SATURATION collector-emitter - 0.5 V, constant, maximum collector current of 0,5 A, gain-bandwidth of (FT) 50 | *** | CHINA | 0.4 | 59,71 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Transistors - Semiconductor devices, for voltage up to 1000V, dissipation of less than 1W are used in electronic equipment, TOTAL - 205000SHT. :. KLS ELECTRONIC CO, LTD is not indicated HOTTECH 0 | *** | CHINA | 12.38 | 1508,82 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, (NOT SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTOR, voltage 45 V, 0.5 POWER Tues FOR NXP BC807 100 NONE SURFACE PCB | *** | UNITED STATES | 0.04 | 3,97 | *** | ***** | ***** |