DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-05 | 8542323100 | Electronic integrated circuits: dynamic memory (DRAM), 256Mb, voltage 3.6 V, frequency 143 MHz, MICRON TECHNOLOGY INC MICRON TECHNOLOGY, CHINA MICRON TECHNOLOGY, CHINA MT48LC8M32B2TG-7IT MEMORY 20 | *** | CHINA | 0.01 | 195,42 | *** | ***** | ***** |
2017-09-19 | 8542323100 | Electronic integrated circuits: dynamic memory (DRAM), 256Mb, voltage 3.6 V, frequency 143 MHz, MICRON TECHNOLOGY INC MICRON TECHNOLOGY, CHINA MICRON TECHNOLOGY, CHINA MT48LC8M32B2TG-7IT MEMORY 20 | *** | THAILAND | 0.01 | 168,32 | *** | ***** | ***** |
2017-09-20 | 8542323100 | Dynamic random access memory (DRAM) with a storage capacity of 512 MBIT NOT MORE DYNAMIC MEMORY MODULE SDRAM- / DATA / -formate - MEMORY RAM, 512M MEMORY SIZE (32M X 16) RATE 200MHz supply voltage 1.7 V - 1.95 The MICRON TEC | *** | CHINA | 0.71 | 1233,85 | *** | ***** | ***** |
2017-09-28 | 8542323100 | Electronic integrated circuits: the dynamic memory (DRAM), 64 MBIT, voltage 3.6 V, FREQ 167 MHz, MICRON TECHNOLOGY INC MICRON TECHNOLOGY, UNITED STATES MICRON TECHNOLOGY, UNITED STATES MT48LC2M32B2P-6AIT-J MEMORY 26 | *** | GERMANY | 0.18 | 127,51 | *** | ***** | ***** |
2017-11-14 | 8542323100 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR1 SO-DIMM 200-PIN 333 MHz, capacity 512 MB (32 MB X 16) VOLTAGE POWER 2.5 VDC, used in industrial computer as | CERVOZ | *** | 0.135 | 72,03 | VANTAA FINLAND | ***** | ***** |
2017-11-18 | 8542323100 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) W9751G6KB-15 512MBIT 84 PINA, 1.7-1.9V SUPPLY VOLTAGE FOR MONITOR PROM.SBORKI LU28E590DS / RU, HAS encryption function / CRYPTOGRAPHY, PACKAGING (1-SPOOL 0 | WINBOND ELECTRONICS | TAIWAN CHINA | 2.33 | 1219,61 | TAIPEI | ***** | ***** |
2017-11-20 | 8542323100 | Integrated circuits, monolithic FM24V10-G - DRAM F-RAM 1M (128KX8) 2.0-3.6V F-RAM. INTENDED FOR EQUIPMENT CONTROL power consumption. SPECIFICATIONS: MEMORY 1 MB VOLTAGE 2 - 3,6 V, the range of operating tempera | CYPRESS SEMICONDUCTOR | *** | 0.48 | 1890 | ST PETERSBURG | ***** | ***** |
2017-11-22 | 8542323100 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR1 SO-DIMM 200-PIN 333 MHz, capacity 512 MB (32 MB X 16) VOLTAGE POWER 2.5 VDC, used in industrial computer as | CERVOZ | *** | 0.034 | 18,01 | VANTAA FINLAND | ***** | ***** |