DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542324500 | The storage device of electronic integrated: a memory static random access, is a diagram of electronic integrated monolithic MEMORY CHIPS the SRAM, in plastic housing, 44-pin (64K * 16 bit) to Voltage. | *** | CHINA | 0.1 | 45,26 | *** | ***** | ***** |
2017-09-05 | 8542324500 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS: static memory (SRAM), 4Mb, a voltage 5.5 V, current of 90 MA, CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR, PHILIPPINES CYPRESS SEMICONDUCTOR, PHILIPPINES CY7C1041D-10ZSXI MEMORY 110 | *** | CHINA | 0.11 | 302,43 | *** | ***** | ***** |
2017-09-05 | 8542324500 | Electronic integrated circuits: static memory (SRAM), 16Mbps, voltage 3.6 V, current 175 MA, CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR, TAIWAN (CHINA) CYPRESS SEMICONDUCTOR, TAIWAN (CHINA) CY7C1069DV33-10ZSXI MEMORY 120 | *** | CHINA | 0.08 | 5790,31 | *** | ***** | ***** |
2017-09-05 | 8542324500 | Static random access memory (SRAM) BASED MEMORY MODULE FORM FACTOR SRAM, capacitance 512 KB VOLTAGE POWER 3.3 VDC, used in industrial computers and controllers, ICP DAS CO., LTD. ICP DAS X608 About | *** | TAIWAN CHINA | 0.24 | 205,06 | *** | ***** | ***** |
2017-09-08 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 1Mbit. Not recorded. SUPPLY VOLTAGE 5V. DIMENSIONS: 21.08 X 10.29 X 2.92MM. ARE NOT CROWBAR electrical equipment, have no function KRI: PT | *** | CHINA | 0 | 7,26 | *** | ***** | ***** |
2017-09-09 | 8542324500 | Electronic integrated circuits, memory devices, OTHER, NOT SCRAP EQUIPMENT, DOES NOT CONTAIN encryption function (CRYPTOGRAPHY); SCOPE: TELECOM. EQUIPMENT FOR INSTALLATION The FEE Memory (RAM) VOLTAGE: 1.4251.575, MEMORY 4 G, ART | *** | TAIWAN CHINA | 0.01 | 125,59 | *** | ***** | ***** |
2017-09-09 | 8542324500 | Electronic integrated circuits, memory devices, OTHER, NOT SCRAP EQUIPMENT, DOES NOT CONTAIN encryption function (CRYPTOGRAPHY); SCOPE: TELECOM. EQUIPMENT FOR INSTALLATION The FEE Memory (RAM) VOLTAGE: 1.4251.575, MEMORY 2 G, ART | *** | TAIWAN CHINA | 0.01 | 55,59 | *** | ***** | ***** |
2017-09-13 | 8542324500 | Integrated circuits, monolithic CY62148EV30LL-45ZSXIT - STATIC RAM 4MB 3V 45NS 512K X 8 LP. INTENDED FOR EQUIPMENT CONTROL power consumption. SPECIFICATIONS: MEMORY SIZE 4 MBIT, VOLTAGE 2,2 - 3,6 V, BPE: MN | *** | CHINA | 1.24 | 1591,11 | *** | ***** | ***** |
2017-09-14 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 8Mbit. Not recorded. SUPPLY VOLTAGE 2.4-3.6V. DIMENSIONS: 18.51 X 10.26 X 1MM. ARE NOT CROWBAR ELECTRICAL EQUIPMENT, HAVE FUNKTSIIK: RI | *** | UNITED KINGDOM | 1.18 | 2047,67 | *** | ***** | ***** |
2017-09-14 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 8Mbit. Not recorded. SUPPLY VOLTAGE 2.4-3.6V. DIMENSIONS: 18.51 X 10.26 X 1MM. ARE NOT CROWBAR ELECTRICAL EQUIPMENT, HAVE FUNKTSIIK: RI | *** | UNITED KINGDOM | 0.5 | 871,35 | *** | ***** | ***** |