DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 128 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.02 | 39,6 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 32 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.09 | 90 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | UNITED STATES | 0.06 | 32,5 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 32 GB is approved for use in telecommunications equipment. supply voltage | *** | MALAYSIA | 0.04 | 175,83 | *** | ***** | ***** |
2017-09-05 | 8542326900 | Electronic integrated circuits: flash memory (flash-ES PROM), 2 GB, voltage 3.6 V, current 30 mA, SAMSUNG ELECTRO-MECHANICS SAMSUNG ELECTRO-MECHANICS, KOREA, REPUBLIC OF SAMSUNG ELECTRO-MECHANICS, Korea, Republic of K9K8G08U0M-PIB0 MEMORY 20 | *** | CHINA | 0.01 | 174,35 | *** | ***** | ***** |
2017-09-06 | 8542326900 | Integrated circuits - electrically erasable rewritable read-only memory VOLTAGE 2 Operating temperature from - 40 to + 85 MB MEMORY 32: XILINX WITHOUT TK B / M XCF32PVOG48C B / M 120 | *** | TAIWAN CHINA | 0.26 | 1991,39 | *** | ***** | ***** |
2017-09-07 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 8 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0.01 | 5 | *** | ***** | ***** |
2017-09-08 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT: Integrated circuits, electrically erasable FLASH MEMORY MEMORY TYPE: nonvolatile memory MEMORY SIZE: FLASH MEMORY SIZE: 1 GB (8 X 128 M) access time: 30 ns VOLTAGE - POWER 2.7 V ~ 3.6 V MX | *** | MALAYSIA | 0.12 | 117,59 | *** | ***** | ***** |
2017-09-12 | 8542326900 | Electronic integrated circuits: flash memory (flash EEPROM-ES), 64 GB, voltage 3.6 V, MICRON TECHNOLOGY INC MICRON TECHNOLOGY, UNITED STATES OF MICRON TECHNOLOGY, UNITED STATES MT29F64G08CBAAAWP-IT MEMORY 15 | *** | MEXICO | 0.01 | 170,15 | *** | ***** | ***** |
2017-09-13 | 8542326900 | Memory chip monolithic integrated electrically erasable programmable, memory type NAND FLASH, VOLUME 1 GB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 3.2 | 7360 | *** | ***** | ***** |