DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-05 | 8542329000 | Electronic integrated circuits: asynchronous memory device UNIDIRECTIONAL FIFO-Memory, 7373 kbps, maximum supply voltage 5.5 V, maximum current 120mA, maximum operating frequency of 28.5 MHz, do not have the function of encryption and CRYPTO | *** | JAPAN | 0 | 454,56 | *** | ***** | ***** |
2017-09-06 | 8542329000 | ELECTRONIC COMPONENTS FOR GENERAL USE FOR OWN PRODUCTION UNITS Electronic Equipment - Electronic integrated circuits, monolithic (chip) MICROCHIP buffer / line driver, voltage 1.65-3.6V TEXAS INSTRUMENTS TEXAS INS | *** | CHINA | 0.03 | 21,51 | *** | ***** | ***** |
2017-09-11 | 8542329000 | Electronic integrated circuits - a non-volatile ferroelectric RAM PERMANENT "MB85RS256BPNF-G-JNERE1" With the support of interfaces SPI, with a storage capacity of 256 Kbits, supply voltage of 3.0V-3.6V, intended for use in systems of the industry: AVT | *** | JAPAN | 0.74 | 2404,37 | *** | ***** | ***** |
2017-09-16 | 8542329000 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic represents a ferroelectric memory device provided with random access (FRAM) with a storage capacity of up to 512 kbps, VOLTAGE | *** | JAPAN | 0.05 | 20,41 | *** | ***** | ***** |
2017-09-21 | 8542329000 | Electronic integrated circuits - a non-volatile ferroelectric RAM PERMANENT "MB85RC256VPNF-G-JNERE1" With the support of interfaces SPI, with a storage capacity of 256 Kbits, supply voltage of 2.7V-5.5V, Predna. FOR USE IN SYSTEMS OF INDUSTRIAL MACHINE: FROM | *** | CHINA | 3.05 | 7040,99 | *** | ***** | ***** |
2017-09-22 | 8542329000 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic represents a ferroelectric memory device provided with random access (FRAM) With the memory to 64K VOLTAGE | *** | CHINA | 0 | 1,83 | *** | ***** | ***** |
2017-09-25 | 8542329000 | CHIP. MODEL "FM24W256-G" -70 pcs. The product is a ferroelectric RAM of 256 kilo-bits and the operating voltage of 5.5 volts. Formed as an integrated monolithic circuit in the surface mount package. : CYPRESS SEMICOND | *** | THAILAND | 0.05 | 387,47 | *** | ***** | ***** |
2017-09-28 | 8542329000 | Element of RAM P / N R1LV3216RSD-7SI # B0, 32 Mbit 3.6V for voltage are intended for telecommunications equipment, there is no encryption function, ARE NOT radiation resistant. NOT SCRAP ELECTRIC NOT MILITARY: RENESAS | *** | MALAYSIA | 0.87 | 6324,39 | *** | ***** | ***** |
2017-09-29 | 8542329000 | Electronic integrated circuits - memory chip FRAM (Ferroelectric Random Access Memory) "MB85RS256BPNF-G-JNERE1" with a storage capacity of 256 kbps (32K X 8) and voltage 3.3V, with support for SPI interface and the ability to shape: MIC | *** | CHINA | 2.3 | 2344,81 | *** | ***** | ***** |
2017-09-29 | 8542329000 | Storage devices, integrated circuits Monolithic FOR flaw detection / HAVE encryption function (CRYPTOGRAPHY) / CIVIL integrated semiconductor chip. Memory Size 16K X 8 Supply Voltage 3 V ~ 3.6 V RABE | *** | BELGIUM | 0.03 | 22,16 | *** | ***** | ***** |