| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8542399010 | Monolithic integrated circuits, is a silicon wafer, cut-on-chip development, deposited thereon LAYERS OF METALS, forms a passive element. Used in the manufacture of components for storage and silicon | *** | *** | 42.52 | 19500 | *** | ***** | ***** |
| 2017-09-08 | 3818001000 | Substrate SIFAS (SILICON FIBER ARRAY SUBSTRATE) silicon wafer (NO DUAL PURPOSE): PRIMER Sifas silicon wafer. Plate using photolithography betrayed FORM defines the use as an expense of the projection OPTI | *** | RUSSIA | 0.08 | 5589,32 | *** | ***** | ***** |
| 2017-09-11 | 8542399010 | Monolithic integrated circuits, is a silicon wafer, cut-on-chip development, deposited thereon LAYERS OF METALS, forms a passive element. Used in the manufacture of components for storage and silicon | *** | RUSSIA | 62.96 | 11000 | *** | ***** | ***** |
| 2017-09-14 | 8486909003 | ELEMENT PBBC ​​COOLING SILICON MIDSECTION-M made from silicon wafers (NO DUAL PURPOSE) Sample delivery: LEMENT PBBC ​​COOLING SILICON MIDSECTION-M made from silicon wafers. DATA ELEMENT: MATERIAL: silicon element PBBC ​​COO | *** | RUSSIA | 0.04 | 13561,46 | *** | ***** | ***** |
| 2017-09-14 | 8542399010 | Monolithic integrated circuits, is a silicon wafer, cut-on-chip development, deposited thereon LAYERS OF METALS, forms a passive element. Used in the manufacture of components for storage and silicon | *** | RUSSIA | 15.76 | 3750 | *** | ***** | ***** |
| 2017-09-19 | 8542399010 | Monolithic integrated circuits, is a silicon wafer 300 mm in diameter, cut-on-chip, to put on them LAYERS metals and metal oxides, formed PASSIVE STRUCTURE TYPE "SENSOR" for the production of silicon | *** | RUSSIA | 5.6 | 4925 | *** | ***** | ***** |
| 2017-09-26 | 8542399010 | Monolithic integrated circuits, is a silicon wafer 300 mm in diameter, cut-on-chip, to put on them LAYERS metals and metal oxides, formed PASSIVE STRUCTURES. FOR THE PRODUCTION OF COMPONENTS FOR: XP | *** | RUSSIA | 5.31 | 150 | *** | ***** | ***** |
| 2017-10-06 | 8486909003 | Of the projection optical modules ELECTRON-OPTICAL COLUMNS lithographic INSTALLATION - Probe CL UP. It is made of a silicon wafer coated with molybdenum layers. / NOT DUAL-USE / | ABSENT | *** | 0.3 | 54246,88 | MOSCOW | ***** | ***** |
| 2017-10-06 | 8486909003 | Of the projection optical modules ELECTRON-OPTICAL COLUMNS lithographic INSTALLATION - Probe CL UP. It is made of a silicon wafer coated with molybdenum layers. / NOT DUAL-USE / | ABSENT | *** | 0.3 | 54246,88 | MOSCOW | ***** | ***** |
| 2017-10-06 | 9002900009 | Elliptical lens: it consists of a silicon wafer SIZE. 55H30H0.5 mm vacuum deposition of silicon layers and tungsten THICK 1000A adhered to the matrix of stainless steel SIZE. 55H30H16MM. Parabolically. It is used for focus and | *** | RUSSIA | 1.1 | 12397,14 | *** | ***** | ***** |