DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-10-23 | 7409900000 | CAT DID 4.4 TAPE BRONZOVAYA GOST 4748-92 DPRNT BRKMTS3-1 0.8 0.7X 300 KG POZ 33.1152 thresh LIST â„– 30L-TAPE silicon 341-356-0213-13 HOLODNOKATANAYA | *** | REPUBLIC OF INDIA | 0.8 | 2,92 | MUMBAI PORT | ***** | ***** |
2017-10-23 | 7409900000 | CAT DID 4.4 TAPE BRONZOVAYA GOST 4748-92 DPRNT BRKMTS3-1 0.8 0.7X 300 KG POZ 33.1152 thresh LIST â„– 30L-TAPE silicon 341-356-0213-13 HOLODNOKATANAYA | *** | REPUBLIC OF INDIA | 0.8 | 2,92 | MUMBAI PORT | ***** | ***** |
2017-11-01 | 8541300009 | THYRISTOR SILICON diffusely, STRUCTURE PNPN, triode, unclosable, INTENDED FOR USE AS A HIGH POWER switching elements, the DC voltage 500 V, DC 150 A, NOT JOM ELECTRICAL | "BETA ELECTRONICS" | REPUBLIC OF INDIA | 3.214 | 371,32 | MOSCOW | ***** | ***** |
2017-11-03 | 2811220000 | SILICON DIOXIDE, is designed to repair and maintenance of Russian-made aircraft: | ABSENT | REPUBLIC OF INDIA | 0.5 | 65,74 | Mumbai airport | ***** | ***** |
2017-11-03 | 2931908001 | Organosilicon compounds are intended for repair and maintenance of Russian-made aircraft: | ABSENT | REPUBLIC OF INDIA | 1.4 | 678,73 | Mumbai airport | ***** | ***** |
2017-11-03 | 2849200000 | 5.2 PROPERTY According to the list â„– 11430.1783: REF. FOR PERSONS. 37 Silicon carbide BLACK 54C (8..6) - 174 kg. BLACK SILICON CARBIDE (silicon carbide powder), grainy 8; 6. CONTENTS SIC (silicon carbide) at least 96%, an iron content not exceeding 0.5%. WMO | ABSENT | REPUBLIC OF INDIA | 174 | 869,01 | MUMBAI PORT | ***** | ***** |
2017-11-03 | 3214101009 | Heat-resistant silicone sealant, derived from low molecular weight dimethylsiloxane rubber. Used for bonding metal and nonmetal surfaces (including silicone rubber), joint sealing, CONTACT WITH g cm. ADVANCED | ABSENT | REPUBLIC OF INDIA | 0.287 | 1 | KOLKATA | ***** | ***** |
2017-11-03 | 8541210000 | Silicon Transistors, NPN epitaxial-planar Structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125C, for industrial applications: | Fine "Azon" | REPUBLIC OF INDIA | 0.156 | 247,93 | MOSCOW | ***** | ***** |
2017-11-03 | 8541290000 | NPN Silicon Transistors MEZAPLANARNY STRUCTURES FOR A switching device and a power supply constant power dissipation is 50W, for industrial applications: 2T839A | Fine "Elter" | REPUBLIC OF INDIA | 0.149 | 84,59 | MOSCOW | ***** | ***** |
2017-11-03 | 8541100009 | 5.2 PROPERTY According to the list â„– 11430.1783: REF. FOR PERSONS. DIOD 2D231B 1 - 23 PCS. DIOD silicon rectifier is designed to work as the rectifier sinusoidal voltage. The average direct current up to 10A maximum reverse voltage 2 | ABSENT | REPUBLIC OF INDIA | 0.138 | 3966,57 | MUMBAI PORT | ***** | ***** |