DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. Heteroepitaxial substrate on | *** | TAIWAN CHINA | 9 | 135200 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES: Field transistors TYPE SEMICONDUCTOR - GAAS (gallium arsenide) is not a phototransistor, power dissipation 7,7VT, designed for use in industrial electronic power amplifier; NOT SCRAP: Electrical | *** | TAIWAN CHINA | 0.65 | 5716,32 | *** | ***** | ***** |
2017-09-05 | 3818009000 | Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL | *** | TAIWAN CHINA | 0.68 | 31394,35 | *** | ***** | ***** |
2017-09-05 | 8542339000 | Microwave integrated circuits (RF ICs) POWER AMP IN TECHNOLOGY InGaAs (Gallium Arsenide-INDIA) - internally coherent amplifier for standard telecommunication utilization in the field 0,5-4GGTS. Packed in plastic packaging and cardboard: OCH | *** | TAIWAN CHINA | 0.1 | 297 | *** | ***** | ***** |
2017-09-11 | 8542339000 | INTEGRATED MONOLITHIC IC / low noise amplifier at GAAS pseudomorphic EPE transistors operating frequency range of 5 ... 10 GHz SERIES HMC902; APPLY TO RADIO point-to-point or point-to-multipoint, in a test control and measuring HMC902LP3 | *** | TAIWAN CHINA | 0 | 297,35 | *** | ***** | ***** |
2017-09-11 | 8542339000 | MONOLITHIC INTEGRATED MICROCHIP / POWER AMPLIFIER FOR GAAS pseudomorphic EPE transistors operating frequency range 12..30 HHC SERIES HMC383; APPLIED IN RADIO point to point, PtM, DATA NETWORKS BY MEANS VSAT, HMC383; AMPLIFIER | *** | TAIWAN CHINA | 0 | 5534,95 | *** | ***** | ***** |
2017-09-11 | 8542339000 | MONOLITHIC INTEGRATED MICROCHIP / POWER AMPLIFIER FOR GAAS pseudomorphic EPE transistors operating frequency range 12..30 HHC SERIES HMC383; APPLIED IN RADIO point to point, PtM, DATA NETWORKS BY MEANS VSAT, HMC383LC4; force | *** | TAIWAN CHINA | 0 | 60,88 | *** | ***** | ***** |
2017-09-11 | 8542399010 | INTEGRATED MONOLITHIC IC / VCO ON TECHNOLOGY GAAS pseudomorphic EPE transistor SERIES HMC507LP5E; Used in industrial control equipment, radio frequency point-to-multipoint, in a satellite HMC507LP5 | *** | TAIWAN CHINA | 0 | 110,38 | *** | ***** | ***** |
2017-09-11 | 8542399010 | MONOLITHIC INTEGRATED MICROCHIP / GAAS MONOLITHIC INTEGRATED WITH MICROCHIP frequency multiplier output frequency range 8: 22GGTS, SERIES HMC573, APPLY radio frequency point-DATA NETWORKS BY MEANS VSAT, CONTROL AND TEST HMC573LC | *** | TAIWAN CHINA | 0 | 79,25 | *** | ***** | ***** |
2017-09-11 | 8542399010 | MONOLITHIC INTEGRATED MICROCHIP / GAAS MONOLITHIC INTEGRATED MICROCHIP VCO ON GETEROBIPOLYARNYH INGAP WITH INTEGRATED TRANSISTOR AMPLIFIER buffered, C operating frequency range 4: 8 GHz SERIES HMC586; APPLY HMC586 | *** | TAIWAN CHINA | 0 | 2879,47 | *** | ***** | ***** |