DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-01 | 3818009000 | SINGLE CRYSTAL PLATE high resistivity gallium arsenide compensate CHROME (GAAS: CR), NOT polished 4-inch diameter (102 +/- 0.5 mm), the thickness of 800 +/- 20 microns, is intended for manufacturing detectors (sensors) REGISTRATION:: :::: | *** | RUSSIA | 1.5 | 2385,26 | *** | ***** | ***** |
2017-09-04 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. Heteroepitaxial substrate on | *** | TAIWAN CHINA | 9 | 135200 | *** | ***** | ***** |
2017-09-05 | 3818009000 | Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL | *** | TAIWAN CHINA | 0.68 | 31394,35 | *** | ***** | ***** |
2017-09-22 | 3818009000 | EPITAXIAL plate consisting of a substrate GAAS (gallium arsenide), doped silicon (SI) (less than 0.003%) C applied layers ALGAINP, doped SI (silicon) and MG (magnesium) FOR USE IN ELECTRONICS MANUFACTURING IN EPITAXIAL PLATE (D | *** | TAIWAN CHINA | 17.09 | 86690,92 | *** | ***** | ***** |
2017-09-28 | 3824999609 | MIXTURE OF CHEMICAL PRODUCTS, import to amend the regulatory documentation, not SOD. Ethyl alcohol, NOT FOR VETERINARY MEDICINE, NOT FOR RETAIL SALE, NOT yavl. Pharmaceutical substances MIXED STANDARD GFAAS (CONTROL STANDARD ALUMINUM) | *** | UNITED STATES | 0.1 | 320,11 | *** | ***** | ***** |
2017-11-15 | 3818009000 | CHEMICAL COMPOUNDS Alloy: INGOTS GAAS monocrystalline GaAs (gallium and arsenic desired quantity ratio) | CMK | SLOVAKIA | 0.517 | 2958,2 | ZARNOVITSA | ***** | ***** |
2017-11-15 | 3818009000 | CHEMICAL COMPOUNDS Alloy: INGOTS GAAS monocrystalline GaAs (gallium and arsenic desired quantity ratio) | CMK | SLOVAKIA | 7.931 | 12853,69 | ZARNOVITSA | ***** | ***** |
2017-11-20 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. | ABSENT | TAIWAN CHINA | 0.9 | 39600 | MOSCOW | ***** | ***** |