DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-16 | 8542321000 | REMEMBERING ustrystv in the form of multichip integrated circuit consisting of two OR MORE interconnected monolithic integrated circuit, UNITED INSEPERABLY into a whole: FLASH MEMORY 128MBIT 75NS 56. PHYSICAL MEMORY 128MB; ACCESS TIME 75 | *** | CHINA | 2.34 | 8780,54 | *** | ***** | ***** |
2017-09-16 | 8542321000 | REMEMBERING ustrystv in the form of multichip integrated circuits consisting of two or MORE interconnected monolithic integrated circuits, INSEPERABLY United into a single unit: DRAM MEMORY 256MBIT 133MH. Memory capacity 250MB; Memory Organization | *** | CHINA | 2.46 | 1343,76 | *** | ***** | ***** |
2017-09-19 | 8542321000 | INTEGRATED CIRCUIT, static random access memory (SRAM), MODEL B8CR512K32RH, 10 pcs, SRAM -. MEMORY BASED CMOS - TECHNOLOGY, 32 bit, 3.3 volt 68-pin ceramic flat four-HULL WITH MICROCHIP | *** | CHINA | 1 | 49482,45 | *** | ***** | ***** |
2017-09-19 | 8542321000 | INTEGRATED CIRCUIT, static random access memory (SRAM), MODEL B8CR512K32RH, in an amount of 6 PCS, SRAM -. MEMORY BASED CMOS - TECHNOLOGY, 32 bit, 3.3 volt 68-pin ceramic flat four-HULL WITH MICROCHIP | *** | CHINA | 0.6 | 29689,47 | *** | ***** | ***** |
2017-11-18 | 8542321000 | Multichip integrated circuits MEMORY, consisting of several interconnected monolithic integrated circuits, INSEPERABLY United into a single unit, located on the insulating substrate and the encapsulation with the findings for installation in | SILICON MOTION | *** | 0.02 | 60 | ST PETERSBURG | ***** | ***** |
2017-11-18 | 8542321000 | Multichip integrated circuits MEMORY, consisting of several interconnected monolithic integrated circuits, INSEPERABLY United into a single unit, located on the insulating substrate and the encapsulation with the findings for installation in | SILICON MOTION | *** | 0.01 | 9,5 | ST PETERSBURG | ***** | ***** |