DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542323100 | The storage device of electronic integrated: dynamic random access memory device comprising 64MBT MEMORY is a circuit electronic integrated monolithic SDRAM MEMORY CHIPS, The plastic housing With 90 VYVODAMI.NA ON | *** | CHINA | 1.95 | 895,74 | *** | ***** | ***** |
2017-09-02 | 8542323100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of up to 256 Mbit Maximum Clock Frequency. | *** | CHINA | 0.02 | 40 | *** | ***** | ***** |
2017-09-06 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT without departing NOT JOM, memory 256 MBIT: MICRON MICRON MT48LC32M8A2P-6A: G MT48LC32M8A2P-6A: G | *** | CHINA | 0.9 | 2205,76 | *** | ***** | ***** |
2017-09-10 | 8542323100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of up to 256 Mbit Maximum Clock Frequency. | *** | TAIWAN CHINA | 0.01 | 7,5 | *** | ***** | ***** |
2017-09-11 | 8542323100 | Electronic integrated circuits dynamical random access memory SDRAM (DRAM) with a storage capacity of 256 MBIT for use in consumer and industrial electronics: Memory chips ART.MT48LC32M8A2P-6AIT: G-24SHT.UPAKOVANY In SPETS.UPAKOVKU: NO | *** | MALAYSIA | 0.28 | 171,45 | *** | ***** | ***** |
2017-09-13 | 8542323100 | Integrated circuits, monolithic, NOT MILITARY NOT SCRAP ELECTRIC: MEMORY CHIPS (SDRAM), for PCB mounting. NO CONTENT encryption (cryptographic) means. NOT radiation resistant. : TECHNICAL the Features | *** | TAIWAN CHINA | 1.1 | 2556,88 | *** | ***** | ***** |
2017-09-14 | 8542323100 | MICROCHIP electronic integrated solid - dynamic random access memory (SDRAM) with a storage capacity of 256 MBIT. (Operating temperature range: 0 ... + 70 ° C) (NOT SCRAP ELECTRIC): ALLIANCE MEMORY WITHOUT A TRADEMARK ALLIANCE MEMOR | *** | AUSTRIA | 0.48 | 714,62 | *** | ***** | ***** |
2017-09-18 | 8542323100 | Dynamic random access memory with a volume NOT MORE MEMORY FOR 512MBIT Copiers, encryption (cryptographic) TOOLS AND ELEMENTS NO, NOT intended for secret MICROCHIP AND REGISTRATION | *** | JAPAN | 0.01 | 4,08 | *** | ***** | ***** |
2017-09-20 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT without departing NOT JOM, memory 256 MBIT: MICRON MICRON MT48LC32M8A2P-6A: G MT48LC32M8A2P-6A: G | *** | CHINA | 0.09 | 99,3 | *** | ***** | ***** |
2017-09-20 | 8542323100 | Dynamic random access memory (DRAM) with a storage capacity of 512 Mbit USED IN ELECTRONIC CONTROL SYSTEMS WASHING MACHINES CHIP CONTROL BOARD / WASH SW MCB EC - HW MCB EC V3 ALLIANCE LAUNDRY CE SRO, TAIWAN (CHINA) ALCOM SW HW | *** | FRANCE | 0.1 | 82,48 | *** | ***** | ***** |