DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542323900 | MICROCHIP electronic integrated monolithic, dynamic random access memory (DRAM) with a storage capacity of 4 GB which do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP elect., For the promo. ASSEMBLY TECHNOLOGY "SAMSUNG" Microcircuits integrated MES | *** | KOREA REPUBLIC OF | 47.2 | 62423,07 | *** | ***** | ***** |
2017-09-01 | 8542323900 | MICROCHIP Electronic integrated circuits, monolithic (dynamic random access memory (DRAM) with a storage capacity of 2 Gbit having no encryption function (CRYPTOGRAPHY) NOT SCRAP Electrics., For the industrial assembly EQUIPMENT "SAMSUNG" Integrated Circuits | *** | KOREA REPUBLIC OF | 20 | 112520,48 | *** | ***** | ***** |
2017-09-05 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity over 512 MBIT / NOT JOM ELECTRICAL / memory chip (memory devices) are designed for storing digital information (programs, configuration parameters, data | *** | CHINA | 0.02 | 315 | *** | ***** | ***** |
2017-09-06 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, MEMORY 4Gbit: MICRON MICRON MT41K256M16TW-107 AIT: P MT41K256M16TW-107 A | *** | CHINA | 0.09 | 73,39 | *** | ***** | ***** |
2017-09-12 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, memory 4 HBT: MICRON MICRON EDB4432BBPA-1D-FR EDB4432BBPA-1D-FR EDB44 | *** | CHINA | 4 | 5094,59 | *** | ***** | ***** |
2017-09-12 | 8542323900 | MICROCHIP electronic integrated solid - STORAGE DEVICE DRAM with a storage capacity 4 Gb. (Operating temperature range: 0 ... + 95 C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK B / N MT41J256M16HA-093G: E B / N 16 | *** | SINGAPORE | 0.05 | 85,73 | *** | ***** | ***** |
2017-09-13 | 8542323900 | Electronic integrated circuits monolithically assembled with the conclusions of the active element (semiconductor devices, transistors and diodes), onto a single semiconductor chip SYSTEMS INTENDED FOR INDUSTRIAL ELECTRONICS: CIRCUIT INTEG | *** | UNITED STATES | 0.08 | 204,75 | *** | ***** | ***** |
2017-09-14 | 8542323900 | MICROCHIP electronic integrated solid - STORAGE DEVICE DRAM with a storage capacity 4 Gb. (Operating temperature range: -40 ... + 95 ° C) (NO ELECTRICAL SCRAP): ALLIANCE MEMORY WITHOUT TRADEMARK ALLIANCE MEMORY AS4C256M16D3A-12BIN B / 15 H | *** | AUSTRIA | 0.06 | 107,82 | *** | ***** | ***** |
2017-09-21 | 8542323900 | Read only memory (CD. Stack dynamic random access memory) for passenger electric. Lifshitz TOV MOD.KONE MONOSPACE T / P to 2500kg (ON) SKOR.DO 2.5m / C (ON) (NOT OR SCRAP EL.OB. EL.TEH.UZLY) SM.DOPOLNENIE memory chip 128X870NSDIP | *** | FINLAND | 0.02 | 16,87 | *** | ***** | ***** |
2017-09-21 | 8542323900 | MICROCHIP electronic integrated monolithic HAVE encryption function (CRYPTOGRAPHY) - dynamic random access memory (DRAM), with a storage capacity 4GB (not radiation resistant) .PRIMENENIE: BUILDING radio electronic equipment for: Software | *** | TAIWAN CHINA | 0.04 | 506,52 | *** | ***** | ***** |