DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8542326100 | Electrically erasable rewritable read-only memory FLASH device in the form of an integrated circuit, memory 0.064MBIT,: FOR DIGITAL TELEVISION consoles. / NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND NOT dual-use | *** | CHINA | 1.5 | 1410 | *** | ***** | ***** |
2017-09-05 | 8542326100 | Electrically erasable rewritable read-only memory in an integrated circuit operating temperatures from -40 to +85 VOLTAGE 3.6 64K: FUJITSU SEMICONDUCTOR LI WITHOUT TK B / M MB85RC64APNF-G-JNERE1 B / M 5 | *** | CHINA | 0.01 | 9,54 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Electrically erasable rewritable read-only memory FLASH device in the form of an integrated circuit, memory, 1Mbit,: FOR ELECTRICITY METERS. / NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND DO NOT DOUBLE PURPOSE; | *** | CHINA | 18 | 13050 | *** | ***** | ***** |
2017-09-15 | 8542326100 | ES-FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT: electrically erasable rewritable read-only memory, POWER SUPPLY 5V memory 4 MBIT, HAS encryption function (CRYPTOGRAPHY) NOT JOM ELECTRICAL CYPRESS SEMICO | *** | PHILIPPINES | 0.84 | 411,78 | *** | ***** | ***** |
2017-09-19 | 8542326100 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 3.6 V Operating temperature from - 40 to + 85 512M: ALLIANCE MEMORY INC WITHOUT TK B / M MT48LC32M16A2TG-75 IT: C B / M 2 | *** | PHILIPPINES | 0 | 26,26 | *** | ***** | ***** |
2017-09-19 | 8542326100 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 5.5 V Operating temperature from - 40 to + 85 2KB: MICROCHIP TECHNOLOGY INC WITHOUT TK B / M 24AA02HT-I / LT B / M 100 | *** | PHILIPPINES | 0.05 | 28,6 | *** | ***** | ***** |
2017-09-20 | 8542326100 | FLASH EPROM ES with a storage capacity to 512 Mbit FOR ELECTRICITY METERS / NOT SCRAP EL.OBORUD. DO NOT WASTE / NOT FOR EQUIPMENT. Exercising. IN explosive. MEDIA / no military., Not a double. DESTINATION. / EEPROM rewritable PERMANENT binges | *** | CHINA | 18 | 13050 | *** | ***** | ***** |
2017-09-21 | 8542326100 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 1.45 V Operating temperature 0 to + 95 512M: MICRON TECHNOLOGY INC WITHOUT TK B / M MT41K512M16HA-125: A B / M 200 | *** | TAIWAN CHINA | 0.82 | 2508,88 | *** | ***** | ***** |
2017-09-28 | 8542326100 | ELECTRICALLY In an integrated circuit VOLTAGE 3.6 erasable rewritable read-only memory in the operating temperature from 0 to + 70 1MB: EVERSPIN TECHNOLOGIES WITHOUT TK B / M MR0A08BYS35 B / M 15 | *** | CHINA | 0.02 | 212,8 | *** | ***** | ***** |
2017-09-28 | 8542326100 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 5.5 V Operating temperature from - 40 to + 85 4KB: MICROCHIP TECHNOLOGY WITHOUT TK B / M 93LC66B-I / SN B / M 16 | *** | CHINA | 0.01 | 5,2 | *** | ***** | ***** |