DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 8542326900 | Integrated circuits - electrically erasable rewritable read-only memory VOLTAGE 2 Operating temperature from - 40 to + 85 MB MEMORY 32: XILINX WITHOUT TK B / M XCF32PVOG48C B / M 120 | *** | TAIWAN CHINA | 0.26 | 1991,39 | *** | ***** | ***** |
2017-09-17 | 8542326900 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory capacity 1 GB, do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC FOR TECHNOLOGY "SAMSUNG" chip. Integra. MONOLITH. Programmable, rewritable FLASH MEMORY SDI | *** | CHINA | 0.01 | 7,63 | *** | ***** | ***** |
2017-09-25 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 1.45 V Operating temperature 0 to + 95 8GB: INTEGRATED SILICON SOLUT WITHOUT TK B / M IS43TR16512AL-125KBL B / M 12 | *** | CHINA | 0.02 | 451,05 | *** | ***** | ***** |
2017-09-29 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 1.45 V Operating temperature from - 40 to + 95 2GB: ALLIANCE MEMORY WITHOUT TK B / M AS4C128M16D3LA-12BIN B / M 18 | *** | TAIWAN CHINA | 0.04 | 152,49 | *** | ***** | ***** |
2017-09-29 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 3.6 V Operating temperature from - 40 to + 85 4GB: MICRON WITHOUT TK B / M MT29F4G01ADAGDWB-IT: G B / M 2 | *** | TAIWAN CHINA | 0 | 20,76 | *** | ***** | ***** |
2017-11-10 | 8542326900 | Electrically erasable rewritable PERMANENT STORAGE DEVICE In an integrated circuit VOLTAGE 3.6 V Operating temperature 0 to + 70 8GB | WITHOUT TK | *** | 0.02 | 218,06 | ST PETERSBURG | ***** | ***** |
2017-11-10 | 8542326900 | Electrically erasable rewritable PERMANENT STORAGE DEVICE In an integrated circuit VOLTAGE 3.6 V Operating temperature 0 to + 70 64GB | WITHOUT TK | *** | 0.007 | 86,27 | ST PETERSBURG | ***** | ***** |
2017-11-10 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 1.95 V Operating temperature from - 40 to + 85 2GB | WITHOUT TK | *** | 0.065 | 454,61 | ST PETERSBURG | ***** | ***** |
2017-11-13 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 1.95 V Operating temperature from - 40 to + 85 4GB | WITHOUT TK | *** | 0.004 | 18,01 | ST PETERSBURG | ***** | ***** |
2017-11-13 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 3.6 V Operating temperature from - 40 to + 85 4GB | WITHOUT TK | *** | 0.003 | 31,15 | ST PETERSBURG | ***** | ***** |