DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-03 | 8542323900 | MICROCIRCUITS electronic integrated monolithically (dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT) having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT JOM, civil applications FOR INDUSTRIAL MICRO | *** | KOREA REPUBLIC OF | 10 | 56733,55 | *** | ***** | ***** |
2017-09-05 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity over 512 MBIT / NOT JOM ELECTRICAL / MEMORY, integrated circuits, BLANK WITHOUT INFORMATION CAPACITY 8GB. STORAGE DEVICE is intended for storing digital INFORMA | *** | CHINA | 0.03 | 279 | *** | ***** | ***** |
2017-09-05 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity over 512 MBIT / NOT JOM ELECTRICAL / MEMORY, integrated circuits, BLANK WITHOUT INFORMATION FLOW 16GB. A storage device is designed to store digital information | *** | CHINA | 0.08 | 185,5 | *** | ***** | ***** |
2017-09-09 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY)), CM. ADDITION. Electronic integrated circuits is monolithic - dynamic random access to memory | *** | UNITED STATES | 0.68 | 2603,91 | *** | ***** | ***** |
2017-09-12 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE DRAM with a storage capacity of 2 Gbit. (Operating temperature range: -40 ... + 95 ° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK B / N MT47H128M16RT-25E IT: C B / N 50 | *** | SINGAPORE | 0.16 | 758,1 | *** | ***** | ***** |
2017-09-12 | 8542323900 | Electronic integrated circuits, monolithic: dynamic random access memory (DRAM), collected, SINGLE, memory 2Gbps; NOT SCRAP electrical equipment, not military purposes; INTENDED SMD on the circuit: BOARD | *** | CHINA | 2.41 | 1008 | *** | ***** | ***** |
2017-09-21 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - dynamic random access memory (DRAM) DRAM with a storage capacity of 2 Gbit. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK B / N MT47 | *** | CHINA | 0.06 | 303,24 | *** | ***** | ***** |
2017-09-25 | 8542323900 | Electronic integrated circuits, monolithic: dynamic random access memory (DRAM), collected, SINGLE, memory 2Gbps; NOT SCRAP electrical equipment, not military purposes; INTENDED SMD on the circuit: BOARD | *** | PHILIPPINES | 5.55 | 3143,4 | *** | ***** | ***** |
2017-09-25 | 8542323900 | Electronic integrated circuits, monolithic: dynamic random access memory (DRAM), collected, SINGLE, memory 2Gbps; NOT SCRAP electrical equipment, not military purposes; INTENDED SMD on the circuit: BOARD | *** | PHILIPPINES | 23.85 | 13522,2 | *** | ***** | ***** |
2017-09-25 | 8542323900 | Electronic integrated circuits, monolithic: dynamic random access memory (DRAM), collected, SINGLE, memory 1Gbit; NOT SCRAP electrical equipment, not military purposes; INTENDED SMD on the circuit: BOARD | *** | PHILIPPINES | 2.34 | 1400 | *** | ***** | ***** |