| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 3818009000 | SINGLE CRYSTAL PLATE high resistivity gallium arsenide compensate CHROME (GAAS: CR), NOT polished 4-inch diameter (102 +/- 0.5 mm), the thickness of 800 +/- 20 microns, is intended for manufacturing detectors (sensors) REGISTRATION:: :::: | *** | RUSSIA | 1.5 | 2385,26 | *** | ***** | ***** |
| 2017-09-01 | 8541401000 | Light emitting diodes are not contained in its structure additional elements for current limit or transformation SUPPLY TYPE SEMICONDUCTOR Aluminum-Gallium-Indium Phosphide TOTAL 172 410 pcs: | XU AN | *** | 1093.24 | 1585,29 | Poltavka | ***** | ***** |
| 2017-09-01 | 8541409000 | Optocouplers SEMICONDUCTOR: Photovoltaic SEMICONDUCTOR PCP for consumer electronics. TYPE POLUPROVODNIKA- multi-element (silicon and gallium arsenide) (NOT SCRAP ELECTRIC). Blisters packed in tape on spools VISHAY Intertechnology | *** | THAILAND | 1.01 | 574,98 | *** | ***** | ***** |
| 2017-09-01 | 8541401000 | Light emitting diodes, for electrical equipment (NOT SCRAP ELECTRIC OR ELECTRICAL COMPONENTS FOR CIVIL USE) Light emitting diodes for consumer electronics. TYPE SEMICONDUCTOR - multi-element (gallium -ALYU | *** | CHINA | 12.21 | 12121,57 | *** | ***** | ***** |
| 2017-09-01 | 8541401000 | Light emitting diodes: Light emitting diodes Semiconductor for consumer electronics. TYPE SEMICONDUCTOR - multielement (phosphide gallium arsenide) (NOT SCRAP ELECTRIC is not intended for lighting). Packed in polymerase | *** | COSTA RICA | 1.96 | 1342,61 | *** | ***** | ***** |
| 2017-09-01 | 8541401000 | Light emitting diodes: Light emitting diodes Semiconductor for consumer electronics. TYPE SEMICONDUCTOR - multi-element (aluminum gallium arsenide) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel OSRAM OPTO SEMICONDUCTORS GMBH | *** | JAPAN | 0.1 | 853,74 | *** | ***** | ***** |
| 2017-09-01 | 8541401000 | Light emitting diodes: Light emitting diodes Semiconductor for consumer electronics. TYPE SEMICONDUCTOR - multi-element (aluminum-gallium phosphide INDIA) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel LUMEX INC. LUMEX SSL-LXA2 | *** | JAPAN | 0.11 | 236,46 | *** | ***** | ***** |
| 2017-09-03 | 0603197000 | Fresh cut flowers and flower buds for bouquets, in the range, TOTAL 1 920 pieces., In plastic. Tanks with water for 1 MET. STELL.-TELEZH., GROSS WEIGHT TELEZH.159.00KGALLIUM C, AMARILLIS, Antirrhinum, Brassica, viburnum, Gentian, gerbera, hypericum, gypsophila | TK MISSING | *** | 62 | 413,08 | BRATISLAVA | ***** | ***** |
| 2017-09-04 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. Heteroepitaxial substrate on | *** | TAIWAN CHINA | 9 | 135200 | *** | ***** | ***** |
| 2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES: Field transistors TYPE SEMICONDUCTOR - GAAS (gallium arsenide) is not a phototransistor, power dissipation 7,7VT, designed for use in industrial electronic power amplifier; NOT SCRAP: Electrical | *** | TAIWAN CHINA | 0.65 | 5716,32 | *** | ***** | ***** |