DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541401000 | Light emitting diodes: Light emitting diodes Semiconductor for consumer electronics. TYPE SEMICONDUCTOR - multi-element (aluminum gallium arsenide) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel OSRAM OPTO SEMICONDUCTORS GMBH | *** | JAPAN | 0.1 | 853,74 | *** | ***** | ***** |
2017-09-01 | 8541401000 | Light emitting diodes: Light emitting diodes Semiconductor for consumer electronics. TYPE SEMICONDUCTOR - multi-element (aluminum-gallium phosphide INDIA) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel LUMEX INC. LUMEX SSL-LXA2 | *** | JAPAN | 0.11 | 236,46 | *** | ***** | ***** |
2017-09-05 | 8541401000 | LED, semiconductor material - aluminum phosphide Indium Gallium, LED colors - red, typical values ​​of 633 nm, the intensity of MKD 180, a maximum voltage of 2.5 V, current 25 mA is designed for illumination and indication: LED, MA | *** | JAPAN | 0 | 10,34 | *** | ***** | ***** |
2017-09-06 | 8542339000 | Microwave integrated circuit (IC UHF) POWER AMP IN TECHNOLOGY GAAS (gallium arsenide) - internally coherent amplifier for standard telecommunications applications in the microwave range 5,8-8,5 GHz. Packed in plastic packaging and cardboard: OCHO | *** | JAPAN | 0.2 | 216,24 | *** | ***** | ***** |
2017-09-06 | 8542339000 | Microwave integrated circuit (IC UHF) POWER AMP IN TECHNOLOGY GAAS (gallium arsenide) - internally coherent amplifier for standard telecommunications applications in the microwave range 5.8-7.2 GHz. Packed in plastic packaging and cardboard: OCH | *** | JAPAN | 5.28 | 61938,63 | *** | ***** | ***** |
2017-09-11 | 3818009000 | CHEMICAL COMPOUNDS DOPED: semiconductor epitaxial layer structure of gallium nitride semi-insulating substrate silicon carbide circular plate with a diameter of 3 inches. It used to build electronic equipment, FOR: FOLLOW | *** | JAPAN | 1.8 | 14024,16 | *** | ***** | ***** |
2017-09-11 | 8541401000 | Light emitting diodes SERIES DURIS S5 "GWPSLR31.EM-LR-A333-1-1", intended for use in industrial, linear lighting, illumination of premises, professional ceiling lights. TYPE SEMICONDUCTOR - gallium nitride. POWER UNIT, SET: The direct | *** | JAPAN | 2.05 | 1809,61 | *** | ***** | ***** |
2017-09-14 | 8541409000 | Optocouplers: Photovoltaic SEMICONDUCTOR PCP for consumer electronics. TYPE SEMICONDUCTOR - multi-element (silicon and gallium arsenide) (NOT SCRAP ELECTRIC). CUT is packaged in blisters Feed VISHAY INTERTECHNOLOGY INC. VISHAY TCMT11 | *** | JAPAN | 0.06 | 53,45 | *** | ***** | ***** |
2017-09-14 | 8541401000 | Light emitting diodes: Light emitting diodes for consumer electronics. TYPE SEMICONDUCTOR - multi-element (aluminum gallium arsenide) (NOT INTENDED FOR LIGHTING EQUIPMENT NOT SCRAP ELECTRIC). Packed in plastic bags (ROS | *** | JAPAN | 0 | 11,36 | *** | ***** | ***** |
2017-09-14 | 8541401000 | Light emitting diodes: Light emitting diodes for consumer electronics. TYPE SEMICONDUCTOR - multi-element (gallium arsenide) (NOT INTENDED FOR LIGHTING EQUIPMENT NOT SCRAP ELECTRIC). CUT is packaged in blisters feed DIODES CBE | *** | JAPAN | 0.26 | 275,37 | *** | ***** | ***** |