DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-04 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. Heteroepitaxial substrate on | *** | TAIWAN CHINA | 9 | 135200 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES: Field transistors TYPE SEMICONDUCTOR - GAAS (gallium arsenide) is not a phototransistor, power dissipation 7,7VT, designed for use in industrial electronic power amplifier; NOT SCRAP: Electrical | *** | TAIWAN CHINA | 0.65 | 5716,32 | *** | ***** | ***** |
2017-09-05 | 3818009000 | Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL | *** | TAIWAN CHINA | 0.68 | 31394,35 | *** | ***** | ***** |
2017-09-05 | 8542339000 | Microwave integrated circuits (RF ICs) POWER AMP IN TECHNOLOGY InGaAs (Gallium Arsenide-INDIA) - internally coherent amplifier for standard telecommunication utilization in the field 0,5-4GGTS. Packed in plastic packaging and cardboard: OCH | *** | TAIWAN CHINA | 0.1 | 297 | *** | ***** | ***** |
2017-09-06 | 8541409000 | Infrared sensor motion for a virtual reality system "VIVE" BRAND "HTC": TYPE SEMICONDUCTOR - gallium arsenide. HTC CORPORATION HTC 54H20600-00M HTC VIVE NO 5 | *** | TAIWAN CHINA | 0.02 | 83,1 | *** | ***** | ***** |
2017-09-08 | 8541409000 | Optocouplers SEMICONDUCTOR: Photovoltaic SEMICONDUCTOR PCP for consumer electronics. TYPE SEMICONDUCTOR - multi-element (silicon and gallium arsenide) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel VISHAY INTERTECHNOLOG | *** | TAIWAN CHINA | 1.39 | 300,72 | *** | ***** | ***** |
2017-09-13 | 8541409000 | Infrared sensor motion for a virtual reality system "VIVE" BRAND "HTC": TYPE SEMICONDUCTOR - gallium arsenide. HTC CORPORATION HTC 54H20600-00M HTC VIVE NO 5 | *** | TAIWAN CHINA | 0.02 | 83,67 | *** | ***** | ***** |
2017-09-18 | 8541401000 | Light emitting diodes: Light emitting diodes for consumer electronics. TYPE SEMICONDUCTOR - multielement (Aluminum-Gallium-Indium Phosphide) (NOT SCRAP ELECTRIC is not intended for lighting). Are packaged in blister packs to the tape on | *** | TAIWAN CHINA | 14.5 | 5305,7 | *** | ***** | ***** |
2017-09-19 | 8541401000 | Light emitting diodes: Light emitting diodes Semiconductor for consumer electronics. TYPE SEMICONDUCTOR - multi-element (gallium arsenide phosphide) (NOT INTENDED FOR LIGHTING EQUIPMENT NOT SCRAP ELECTRIC). Packed in shining | *** | TAIWAN CHINA | 0.13 | 263,91 | *** | ***** | ***** |
2017-09-19 | 8541409000 | Optocouplers SEMICONDUCTOR: Photovoltaic SEMICONDUCTOR PCP for consumer electronics. TYPE SEMICONDUCTOR - multi-element (gallium-aluminum-arsenide and silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TOSHIBA CORP | *** | TAIWAN CHINA | 0.76 | 1178,66 | *** | ***** | ***** |