DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-10-02 | 2853909000 | -ARSENID inorganic compounds of gallium, unalloyed, AS Semi-Insulating Substrates (plates) is not a source of ionizing IZLUCHENIYA.NE yavl. WASTE. DOES NOT CONTAIN NEORGAN. Fluorine compounds. NOT yavl. Hydrides of phosphorus and phosphide TSINKA.NE Military | WITHOUT A TRADEMARK | CHINA | 0.246 | 2583 | ST PETERSBURG | ***** | ***** |
2017-10-13 | 2853909000 | -ARSENID inorganic compounds of gallium, unalloyed, AS Semi-Insulating Substrates (plates) is not a source of ionizing IZLUCHENIYA.NE yavl. WASTE. DOES NOT CONTAIN NEORGAN. Fluorine compounds. NOT yavl. Hydrides of phosphorus and phosphide TSINKA.NE Military | WITHOUT A TRADEMARK | *** | 0.098 | 1837,5 | ST PETERSBURG | ***** | ***** |
2017-11-01 | 8541401000 | Three-color high-brightness LEDs "ASMB-MTB1-0A3A2" to the coil, for use in an electronic scoreboard and full-color display for indoor use. TYPE SEMICONDUCTOR - indium nitride-gallium. | BROADCOM | *** | 0.584 | 1040 | ST PETERSBURG | ***** | ***** |
2017-11-02 | 8541401000 | Light-emitting diodes, are not contained in a set of wires, power supply and switch. Used in radio electronic APPARATUS FOR GENERAL PURPOSE. TYPE SEMICONDUCTOR - gallium nitride. | ROHM SEMICONDUCTOR | *** | 0.001 | 18,51 | ST PETERSBURG | ***** | ***** |
2017-11-02 | 8541409000 | Semiconductor devices, optocouplers with transistor output, consisting of an LED and the photodetector AS FUNCTION With micro electro-optical signal conversion. TYPE SEMICONDUCTOR - gallium nitride. | VISHAY | *** | 0.05 | 32,66 | ST PETERSBURG | ***** | ***** |
2017-11-07 | 3818009000 | CHEMICAL COMPOUNDS Alloy: a semiconductor substrate of gallium arsenide, ligated silicon, the conductivity type N, the circular plate 2 inch diameter (50.8 mm), thickness 350 microns, INTENDED FOR USE IN MICROELECTRONICS | WITHOUT A TRADEMARK | *** | 0.272 | 5145 | ST PETERSBURG | ***** | ***** |
2017-11-08 | 8541401000 | Light emitting diodes SERIES DURIS S5 "GDPSLR31.13-3T1U-25-1". Predna. FOR USE IN: architectural, linear lighting, direction, INTERNAL LIGHT, PROFESSIONAL ceiling lights. TYPE SEMICONDUCTOR - gallium nitride. power supply | OSRAM | *** | 0.258 | 382,57 | ST PETERSBURG | ***** | ***** |
2017-11-08 | 8541401000 | Light emitting diodes DURIS E5 SERIES MODELS "GWJDSRS1.EC-FUGQ-5H71-L1N2", Predna. FOR USE IN lights, shop lighting, indoor lighting. TYPE SEMICONDUCTOR gallium nitride. Power supply, power cord, switch is not. | OSRAM | *** | 8.8 | 3357,33 | ST PETERSBURG | ***** | ***** |
2017-11-16 | 8541401000 | A light emitting diode infrared glow TYPE SEMICONDUCTOR gallium arsenide, CURRENT CONSUMPTION TO 1000 MA NAPR.PIT 3.4 volts, 850 nm, -40 +125 GRAD .: | MOUSER | *** | 1.2 | 2331,6 | ST PETERSBURG | ***** | ***** |
2017-11-20 | 8541409000 | SEMICONDUCTOR DEVICES: C optocoupler triac outputs "MOC3063SR2M", consisting of GAAS LEDs OPTICAL DUAL monolithic silicon detectors. TYPE SEMICONDUCTOR - gallium arsenide. | ON SEMICONDUCTOR | *** | 1.055 | 298,51 | ST PETERSBURG | ***** | ***** |