DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 3818001000 | Silicon doped with boron, a plate circular diameter of 100mm, with double-sided polishing, used in the manufacture of optical filters SECURITY SYSTEMS. WASTE NO:. SHANGHAI BOSUN IMPORT & EXPORT CO, LTD BOSUN ABSENT ABSENT otsutst | *** | CHINA | 180 | 20190 | *** | ***** | ***** |
2017-09-04 | 3818001000 | SILICON MONOKRISTALICHESKY, alloyed plate DO NOT WASTE: 100mm P <100> 12 OHM * CM-300SHT. : "PAI HAUNG TECHNOLOGY CO," Taiwan. ABSENT. 0 | *** | TAIWAN CHINA | 7.2 | 4129,37 | *** | ***** | ***** |
2017-09-04 | 3818001000 | Silicon is alloyed with a disc-shaped. Dopant (impurity) -Bor (B) .Use AS UPPER ELECTRODE FOR CAMERA SETTINGS pickling REACTIVE ION ETCHING PLASMA OXIDE SILICONE LAM RAINBOW 4520, which is used for VIA ELE | *** | UNITED STATES | 1.2 | 2786,91 | *** | ***** | ***** |
2017-09-06 | 3818001000 | Monocrystalline wafers FROM phosphorus-doped silicon, are not processed. PROVIDED FOR FURTHER multi-stage process in the manufacturing in order to obtain suitable vehicle for the manufacture of solar cells, NOT MILITARY: NEOBRAB | *** | CHINA | 1062 | 96019,44 | *** | ***** | ***** |
2017-09-06 | 3818001000 | Silicon in ingot FZN77.3-90-19.055KG. MATERIAL monocrystalline silicon doped with phosphorus. FOR SEMICONDUCTOR DEVICES. : SILTRONIC AG ABSENT 0 | *** | GERMANY | 19.06 | 9756,16 | *** | ***** | ***** |
2017-09-07 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 PP + R10-13 / T5.5-6.5 diameter 200 mm, P + type (boron doped). INTENDED FOR USE IN THE PRODUCTION OF INTEGRATED CIRCUITS. SUM | *** | JAPAN | 2.6 | 4111,39 | *** | ***** | ***** |
2017-09-07 | 3818001000 | SILICON MONOKRISTALICHESKY doped In WAFERS without departing: IES 100 0.01 (111) -2500SHT, EFC 100 3-30 (111) -907SHT, KDB 100 0.03 (111) -150SHT... OOO "PROLOGUE SEMIKOR" Ukraine there is no 0 | *** | UKRAINE | 72.1 | 28038,5 | *** | ***** | ***** |
2017-09-11 | 3818001000 | High-resistivity silicon wafer. Diameter of 100 mm, thickness of 460 microns. SOURCE MATERIAL FOR MANUFACTURING CRYSTAL INTEGRATED CIRCUITS: GREAT ASCENT INTERNATIONAL LIMITED GREAT ASCENT INTERNATIONAL LIMITED 100 | *** | JAPAN | 2.4 | 7170 | *** | ***** | ***** |
2017-09-11 | 3818009000 | CHEMICAL COMPOUNDS DOPED: semiconductor epitaxial layer structure of gallium nitride semi-insulating substrate silicon carbide circular plate with a diameter of 3 inches. It used to build electronic equipment, FOR: FOLLOW | *** | JAPAN | 1.8 | 14024,16 | *** | ***** | ***** |
2017-09-11 | 3818001000 | SILICON MONOKRISTALICHESKY, alloyed plate DO NOT WASTE: 4 "N <100> 40 OHMCM (FZ) -985SHT:.. Plant SILTRONIK AG, GERMANY NONE 0 | *** | GERMANY | 12 | 18566,59 | *** | ***** | ***** |