DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-05 | 8541500000 | Silicon solar batteries collected in the module, DIRECTLY convert solar energy into electricity | ABSENT | *** | 15450 | 81148,01 | SHANGHAI | ***** | ***** |
2017-09-05 | 8541500000 | Silicon solar batteries collected in the module, DIRECTLY convert solar energy into electricity: the solar panel based on polycrystalline silicon, the power of 320 W, voltage 35 V solar panel based on polycrystalline silicon, | *** | CHINA | 15450 | 81148,01 | *** | ***** | ***** |
2017-09-09 | 8541500000 | MATRIX silicon photodetector / MODULE (DETECTOR) TOTAL 400 PCS. FOR thermal imaging device and camera MATRIX silicon photodetector / MODULE (DETECTOR) TYPE UL 27 April 2 SIZE 640 * 480 FEATURES: - NETD <60 MK (F | *** | SINGAPORE | 6.7 | 742616,38 | *** | ***** | ***** |
2017-09-10 | 8541500000 | SEMICONDUCTOR DEVICES, SILICON, optocouplers are used for installation and repair of household electronic equipment, ARE NOT CROWBAR electrical equipment, not INDICATORS AND SENSORS disrepair: PCP CHANNEL, BODY DIP4, silicic, in the Plaza | *** | CHINA | 3.39 | 1770 | *** | ***** | ***** |
2017-09-15 | 8541500000 | MATRIX silicon photodetector / MODULE (DETECTOR) TOTAL 170 PCS. FOR thermal imaging device and camera MATRIX silicon photodetector / MODULE (DETECTOR) TYPE UL 27 April 2 SIZE 640 * 480 FEATURES: - NETD <60 MK (F | *** | SINGAPORE | 3.3 | 312063,59 | *** | ***** | ***** |
2017-09-20 | 8541500000 | Multi and single crystal silicon wafers (unprinted) -DIODNYE STRUKTURY.RAZMER: 156H156MM, thickness 200 microns, CONDUCTIVITY TYPE: P-TYPE .: single crystal wafers multicrystalline PLATE PLATE boron doping, created by the C | *** | CHINA | 28 | 4331,8 | *** | ***** | ***** |
2017-09-28 | 8541500000 | SILICON Temperature Sensor "KTY81 / 110,112" PTC strength, for use in measuring and control systems. TYPE SEMICONDUCTOR - SILICON. : Temperature sensors. NXP SEMICONDUCTORS NXP | *** | PHILIPPINES | 4.2 | 5542 | *** | ***** | ***** |
2017-09-28 | 8541500000 | MATRIX silicon photodetector / MODULE (DETECTOR) TOTAL 130 PCS. FOR thermal imaging device and camera MATRIX silicon photodetector / MODULE (DETECTOR) TYPE UL 27 April 2 SIZE 640 * 480 FEATURES: - NETD <60 MK (F | *** | SINGAPORE | 2.2 | 235627,24 | *** | ***** | ***** |
2017-09-29 | 8541500000 | Discrete Semiconductor Modules, based on the work of field effect transistors, TYPE SEMICONDUCTOR - SILICON VOLTAGE 70 VDC, 8.5 A CURRENT, RESISTANCE 76 IOM, SCOPE - INDUSTRIAL ELECTRONICS,: IXYS IXYS, UNITED W | *** | UNITED STATES | 0.5 | 570,5 | *** | ***** | ***** |
2017-09-29 | 8541500000 | Photosensitive semiconductor devices DO NOT USE FOR GENERAL, INCLUDING: Semiconductor Magnetosensitive POSITION SENSOR WITH DIGITAL OUTPUT "Open collector" HOUSING SOT-23F, formed on the silicon crystal according to MOS (CM | *** | CHINA | 0.1 | 211,06 | *** | ***** | ***** |