DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,30VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | THAILAND | 0.97 | 285,76 | *** | ***** | ***** |
2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NEXPERIA BV NEXPERIA PDTC114ET.215 PDT | *** | MALAYSIA | 3.6 | 913,31 | *** | ***** | ***** |
2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,31VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel DIOTEC SEMICONDUCTOR AG DIOTEC BC807-40 | *** | JAPAN | 0.01 | 5,91 | *** | ***** | ***** |
2017-09-02 | 8541210000 | Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 80 V, the maximum collector current of 1.5 A, power dissipation 0.9W, CASING TO-226-3. LOCATED in the tape is packaged in a plastic bag. : STMICROELECTRON | *** | MALAYSIA | 0.2 | 77,26 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Transistor: MODULE TRANSISTOR SEMICONDUCTOR power dissipation 0,7VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel FAIRCHILD SEMICONDUCTOR CORPORAT | *** | CHINA | 0.08 | 163,98 | *** | ***** | ***** |
2017-09-04 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NEXPERIA BV NEXPERIA PDTA114ET.215 PDT | *** | MEXICO | 0.2 | 208,58 | *** | ***** | ***** |
2017-09-05 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,255VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER P | *** | BRAZIL | 0.01 | 9,87 | *** | ***** | ***** |
2017-09-05 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NEXPERIA BV NEXPERIA PDTC123ET.215 PDT | *** | VIETNAM | 0.85 | 172,34 | *** | ***** | ***** |
2017-09-06 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,3VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon). (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | MEXICO | 0.85 | 317,44 | *** | ***** | ***** |
2017-09-06 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 0.8W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Are packaged in blister packs in tape on the coil ON SEMICONDUCTOR ON SEMICONDUCTOR BSP52T1 | *** | CHINA | 4.58 | 1190,09 | *** | ***** | ***** |