DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541100009 | DIODE. Housing Type SMD0603 VOLTAGE 1.25 V, power management switching. ASSEMBLY TYPE: SMD / SMT PACKAGING / UNIT: TO-236AB MAXIMUM CURRENT TRANSFER 4 A IF - DIRECT CURRENT: 0.215 A CONFIGURATION: DUAL SERIES RECOVERY TIME: NS 4 APPLY | KINGBRIGHT | *** | 0.563 | 840,41 | MOSCOW | ***** | ***** |
2017-11-01 | 8541100009 | TVS-diode (suppressor) SEMICONDUCTOR MATERIAL - SILICON VOLTAGE 87.1 V Power Dissipation 5 KW, is designed to limit the voltage to a logic circuit | LITTELFUSE, CHINA | *** | 0.105 | 25,4 | MOSCOW | ***** | ***** |
2017-11-01 | 8541100009 | Schottky diodes, SEMICONDUCTOR MATERIAL - SILICON VOLTAGE 40 V, current 0.2 A, are used in logic circuits to improve their performance, SCOPE - INDUSTRIAL ELECTRONICS, | NEXPERIA, INFINEON TECHNOLOGIES, DIODES, CHINA | *** | 0.012 | 1300,37 | MOSCOW | ***** | ***** |
2017-11-02 | 8541100009 | PULSED rectifier diodes SEMICONDUCTOR MATERIAL - SILICON VOLTAGE 1000, current 70 A, APPLIED INDUSTRIAL ELECTRONICS, | VISHAY SEMICONDUCTOR, VISHAY INTERTECHNOLOGY, NEXPERIA, TAIWAN SEMICONDUCTOR, CHINA | *** | 0.103 | 44,12 | MOSCOW | ***** | ***** |
2017-11-02 | 8541100009 | TVS-diode (suppressor) SEMICONDUCTOR MATERIAL - silicon, voltage 5.8 V Power Dissipation 1.5 kW, is designed to limit the voltage to a logic circuit | LITTELFUSE, VISHAY INTERTECHNOLOGY, TAIWAN SEMICONDUCTOR, VISHAY SEMICONDUCTOR, ANDORRA | *** | 0.008 | 12,18 | MOSCOW | ***** | ***** |
2017-11-03 | 8541100009 | Semi-conductor, rectifier, in a small package with metal flange UNDER VERTICAL THROUGH PCB mounting. Operating voltage up to 800 V. used to develop CONVERTER UNITS | FOTON | UZBEKISTAN | 43.3 | 30043,12 | MOSCOW | ***** | ***** |
2017-11-07 | 8541100009 | DIODES, VIEW INSTALLATION: SCREW MOUNT, VR - inverse voltage: 400 V, IF - forward current: 150 A, TYPE: FAST RECOVERY RECTIFIERS, VF - Forward voltage: 1.3 V, MAX CURRENT TRANSFER: 1.5 KA, minimum working temperature: - 55 C, the WORKING | VISHAY | CHINA | 36 | 9600 | MOSCOW | ***** | ***** |
2017-11-07 | 8541100009 | DIODES, VIEW INSTALLATION: SCREW MOUNT, VR - inverse voltage: 200 V, IF - forward current: 150 A, TYPE: FAST RECOVERY RECTIFIERS, VF - Forward voltage: 0.99 V, MAX CURRENT TRANSFER: 1.6 KA, minimum working temperature: - 55 C, the | VISHAY | CHINA | 18 | 4500 | MOSCOW | ***** | ***** |
2017-11-07 | 8541100009 | DIODE (electronic components), are used in electronic circuits MEMBERS OF THE GEOPHYSICAL SYSTEMS USMPR to convert AC power to DC, NOT A photodiode or light-emitting diodes, voltage 150V, IS NOT A | ABSENT | *** | 0.006 | 78,2 | MOSCOW | ***** | ***** |
2017-11-07 | 8541100009 | TVS-diode (suppressor) SEMICONDUCTOR MATERIAL - SILICON VOLTAGE 42.1 V, the power dissipation 3000 W, is designed to limit the voltage to a logic circuit | PANJIT SEMICONDUCTOR, INFINEON TECHNOLOGIES, NEXPERIA, Itay | *** | 0.54 | 403,52 | MOSCOW | ***** | ***** |