DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | TRANSISTORS power dissipation LESS THAN 1W. Maximum voltage 30V RESERVOIR: SHENZHEN QIYAO PLASTIC & ELECTRONIC CO, LTD.. MMUN2211LT1 (SOT-23) 1,000 | *** | CHINA | 0.06 | 171,3 | *** | ***** | ***** |
2017-09-02 | 8541210000 | TRANSISTOR SEMICONDUCTOR, SILICON, 2N7002K, drain-source voltage 60V, drain current 380MA, OUTPUT 0.42VT, SIZE 2.9 * 2.4 * 1.0mm, for PROM.SBORKI monitor model LS22D390HSX / RU ART: 0505-003397 SUPER VICTORY ENTERPRISES LIMITED. SUPER VICTORY ENTERPR | *** | CHINA | 5.62 | 730,2 | *** | ***** | ***** |
2017-09-02 | 8541210000 | Transistors SEMICONDUCTOR NOT SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly TVS "SAMSUNG" TRANSISTOR SEMICONDUCTOR, SILICON AP2317GN, drain-source voltage 20V CURRENT stations | *** | CHINA | 0.36 | 689,1 | *** | ***** | ***** |
2017-09-04 | 8541210000 | BIPOLAR TRANSISTORS TRANZISTOR- / DATA / -Voltage emitter-base (VEBO) - 5 V, VOLTAGE SATURATION collector-emitter - 0.5 V, constant, maximum collector current of 0,5 A, gain-bandwidth of (FT) 50 | *** | CHINA | 0.4 | 59,71 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Transistors - Semiconductor devices, for voltage up to 1000V, dissipation of less than 1W are used in electronic equipment, TOTAL - 205000SHT. :. KLS ELECTRONIC CO, LTD is not indicated HOTTECH 0 | *** | CHINA | 12.38 | 1508,82 | *** | ***** | ***** |
2017-09-04 | 8541210000 | SEMICONDUCTOR TRANSISTORS for use in the installation of electrical circuits, yavl. CROWBAR ELECTRICAL - Bipolar transistors, semiconductors TYPE - NPN-CHANNEL, VOLTAGE 48V POWER 0.25W RAB.TEMP. -65 - +150 GRAD.TSELS,: PACKAGED. | *** | CHINA | 3.5 | 150,05 | *** | ***** | ***** |
2017-09-04 | 8541210000 | SEMICONDUCTOR TRANSISTORS for use in the installation of electrical circuits, yavl. CROWBAR ELECTRICAL - TRANSISTOR FIELD TYPE SEMICONDUCTOR - N-CHANNEL, VOLTAGE 20V, POWER 0.3VT, RAB.TEMP. -55 - +150 GRAD.TSELS packed in: HOUR. | *** | CHINA | 0.1 | 2,38 | *** | ***** | ***** |
2017-09-05 | 8541210000 | TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE: transistors, bipolar, POLARITY PNP, MAXIMUM collector-emitter voltage of 100 volts, silicon, Maximum DC collector current of 6A, BASE T | *** | CHINA | 0.7 | 40,58 | *** | ***** | ***** |
2017-09-05 | 8541210000 | TRANSISTORS SEMI: Semiconductor NPN bipolar transistor structure, the power dissipation 0.225 BT, collector-emitter voltage of 15 V, 50 mA, CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT MOSFET TR | *** | CHINA | 0.01 | 13,55 | *** | ***** | ***** |
2017-09-06 | 8541210000 | TRANSISTOR DESIGNED FOR USE IN TELECOMMUNICATIONS EQUIPMENT NPN BIPOLAR TRANSISTOR, the maximum collector-emitter voltage 40V, the maximum collector current of 800 MA cutoff frequency of 300MHz, CASING SOT-23, power dissipation of 250 M | *** | CHINA | 0.09 | 15,82 | *** | ***** | ***** |