DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541290000 | Bipolar transistors Mounting Style: SMD / SMT INPUT VOLTAGE MAX .: 45 the V, Maximum DC Current 0.5 A. is used in various schemes for TV, audio, video and radio broadcasting, cellular products / NOT FOR DOMESTIC USE | NEXPERIA | *** | 0.029 | 93,07 | MOSCOW | ***** | ***** |
2017-11-01 | 8541290000 | Field-effect transistors, power dissipation 32 W, a voltage source-drain 600, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, CHINA | *** | 0.004 | 4,32 | MOSCOW | ***** | ***** |
2017-11-01 | 8541290000 | Field-effect transistors, power dissipation of 100 W, a voltage source-drain 100 V, semiconductor - silicon is designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, GERMANY | *** | 0.4 | 1085,5 | MOSCOW | ***** | ***** |
2017-11-01 | 8541290000 | Field-effect transistors, power dissipation of 235 watts, the voltage source-drain 400, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | ON SEMICONDUCTOR, CHINA | *** | 0.225 | 103,55 | MOSCOW | ***** | ***** |
2017-11-07 | 8541290000 | TRANSISTORS ART. BDX53C - 3368 pcs, Art.. BDX54C - 5000 pcs. NOT phototransistor NOT SCRAP ELECTRIC. SPECIFICATIONS: Rated voltage, MAX. 100V CURRENT 8A | ABSENT | CHINA | 6.092 | 1180,77 | MOSCOW | ***** | ***** |
2017-11-08 | 8541290000 | Field-effect transistors, power dissipation 158 VT, the voltage source-drain 75, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, 118 | NEXPERIA, PHILIPPINES | *** | 0.011 | 29,62 | MOSCOW | ***** | ***** |
2017-11-08 | 8541290000 | FET, voltage 60 V, Resistance of the IOM 23, dissipation of 110 W, current 48 A SEMICONDUCTOR - SILICON FOR LOGIC CIRCUITS ARE TO CONTROL PARAMETERS OF ENERGY, | INFINEON TECHNOLOGIES, CHINA | *** | 0.05 | 63,39 | MOSCOW | ***** | ***** |
2017-11-08 | 8541290000 | Field-effect transistors, power dissipation of 150 W, a voltage source-drain 1.2 KV, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | STMICROELECTRONICS, MALAYSIA | *** | 0.009 | 15,5 | MOSCOW | ***** | ***** |
2017-11-13 | 8541290000 | Field-effect transistors, power dissipation 55 W, a voltage source-drain 65, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, ART: | MACOM | *** | 0.016 | 121,26 | MOSCOW | ***** | ***** |
2017-11-13 | 8541290000 | Field-effect transistors, power dissipation 104 W, a voltage source-drain 800, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, ART: | INFINEON TECHNOLOGIES | *** | 1.386 | 637,64 | MOSCOW | ***** | ***** |