DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-07 | 8541290000 | Power MOSFET "SPA20N60C3" COOL MOS Series, C Power Dissipation 34.5 W with an N-channel hop from drain-source voltage 600V, 20,7A drain current, gate voltage 20V.TIP SEMICONDUCTOR - SILICON. : MOSFET INTENDED FOR UNIVER | *** | CHINA | 2.75 | 966,49 | *** | ***** | ***** |
2017-09-10 | 8541290000 | Transistors, phototransistor EXCEPT: SEMICONDUCTOR TRANSISTOR, for PCB mounting, POLUPROVODNIKA- TYPE SILICON, power dissipation 300W IXYS IXYS IXYS NO IXTA26P20P 200 | *** | JAPAN | 0.5 | 309,76 | *** | ***** | ***** |
2017-09-12 | 8541290000 | TRANSISTOR SEMICONDUCTOR With power dissipation 7 W, is designed to control the current in an electric circuit. MODEL VNN1NV04PTR-E. ART: A2C00049292 - 10000 pieces; : STMICROELECTRONICS ST 0 | *** | BRAZIL | 3 | 1584,33 | *** | ***** | ***** |
2017-09-25 | 8541290000 | Transistors for PCB mounting, N CHANNEL FIELD, power dissipation 156 BT: transistors for PCB mounting, N CHANNEL FIELD, power dissipation 156 BT MITSUBISHI ELECTRIC MITSUBISHI ELECTRIC RA20H8087M-101 RA20H8087M-101 absent | *** | FRANCE | 0.01 | 1,45 | *** | ***** | ***** |
2017-09-27 | 8541290000 | POWERFUL N-channel MOS transistors: "IPD50R3K0CEAUMA1" and "IPD50R3K0CEBTMA1" SERIES COOLMOS CE COMMON dissipation of 26 watts and the breakdown voltage of the drain-source 550V; "TK15A20D, S4X (S" Since power dissipation of 35W, drain-source voltage 200V | INFINEON, COOLMOS | *** | 470.733 | 44806,92 | ST PETERSBURG | ***** | ***** |
2017-09-27 | 8541290000 | POWERFUL N-channel MOS transistors: "IPD50R3K0CEAUMA1" and "IPD50R3K0CEBTMA1" SERIES COOLMOS CE COMMON dissipation of 26 watts and the breakdown voltage of the drain-source 550V; "TK15A20D, S4X (S" Since power dissipation of 35W, drain-source voltage 200V; "FCPF29 Silo | *** | UNITED STATES | 470.73 | 44806,92 | *** | ***** | ***** |
2017-09-28 | 8541290000 | TRANSISTOR SEMICONDUCTOR C Power Dissipation 85 W TYPE SEMICONDUCTOR - single-element, is designed to control the current in an electric circuit. MODEL BUK7635-55A, 118 ART: A2C00032133 - 18400 pieces; : NXP NXP 0 | *** | PHILIPPINES | 42.96 | 3249,12 | *** | ***** | ***** |
2017-11-02 | 8541290000 | Bipolar transistor power dissipation of 500W to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT227, ART. VS-GA200SA60UP - 160SHT. | VISHAY EUROPE | *** | 7 | 4254,82 | MOSCOW | ***** | ***** |
2017-11-10 | 8541290000 | MOS transistor: N-CHANNEL "TK15A20D, S4X (S" Since power dissipation of 35W, drain-source voltage 200V; C NPN-transition "VSKH56-16,115" COMMON dissipation of 1.3 W, collector-emitter voltage 80V TYPE SEMICONDUCTOR -. SILICON. | TOSHIBA | *** | 27.8 | 8390,7 | ST PETERSBURG | ***** | ***** |
2017-11-29 | 8541290000 | TRANSISTOR SEMICONDUCTOR C Power Dissipation 85 W TYPE SEMICONDUCTOR - single-element, is designed to control the current in an electric circuit. MODEL BUK7635-55A, 118 ART: A2C00032133 - 8000 pcs | NXP | *** | 18.56 | 1478,67 | Poing | ***** | ***** |