Aba Import Data of Russia

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-14	8542326900	Integrated circuits, monolithic, DIGITAL, FLASH electrically erasable programmable read-only memory (FLASH EEPROM) MT29F4G08ABADAWP, VOLUME 4Gbit, pin 48, SUPPLY VOLTAGE 2.7-3.6V, 1W, dimensions 20 * 12 * 1.2mm, 1107- FOR PROM.SBORKI 0020	***	UNITED STATES	2.15	1734,11	***	*****	*****
2017-09-18	8542326900	Electronic integrated circuits Monolithic COLLECTED: FLASH EPROM ES With Memory capacity 64000 MBIT for surface mounting on a circuit board digital electronics. NOT AN ELECTRICAL CROWBAR. MT29F8G08ABACAWP-IT: C MICRON TECHNOLOGY, I	***	UNITED STATES	0.68	1482,38	***	*****	*****
2017-09-19	8542326900	Electronic integrated circuits: a flash memory (FLASH-EPROM ES), 32 GB, the voltage 3.6 V, current of 50 mA, MICRON TECHNOLOGY INC MICRON TECHNOLOGY, UNITED STATES MICRON TECHNOLOGY, UNITED STATES MT29F32G08AFABAWP-IT MEMORY 20	***	THAILAND	0.01	569,74	***	*****	*****
2017-09-21	8542326900	Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) MT29F2G08ABAEAWP, 2Gbps, 2.7-3.6V POWER, POWER 0.18VT, 48-pin, size 20 * 12 * 1.2mm, for the industrial assembly TV. MODEL UE ART: 1107-	***	UNITED STATES	2.15	1155,52	***	*****	*****
2017-09-26	8542326900	FLASH MEMORY CHIPS 16 GB SUPPLY VOLTAGE 2.7-3.6 V Operating temperature -40 to +85 C MICRON LTD None None MT29F16G08ABACAWP-IT 2000	***	CHINA	2.31	12980,8	***	*****	*****
2017-11-10	8542326900	Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL	MICRON	***	7.98	5520	ST PETERSBURG	*****	*****
2017-11-10	8542326900	Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL	MICRON	***	5.32	3680	ST PETERSBURG	*****	*****
2017-11-16	8542326900	Electronic integrated circuits - in flash memory "NOR" "MT25QL256ABA8ESF-0SIT" With a memory capacity of 256 Mbits supply voltage 2,7-3,6V intended for universal use in consumer, automotive and industrial electronics. RANGE	MICRON	***	0.09	41,35	ST PETERSBURG	*****	*****
2017-11-21	8542326900	Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL	MICRON	TAIWAN CHINA	46.55	32200	ST PETERSBURG	*****	*****
2017-11-24	8542326900	Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL	MICRON	TAIWAN CHINA	25.27	17480	ST PETERSBURG	*****	*****

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