| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-04 | 3818001000 | Silicon doped with boron, a plate circular diameter of 100mm, with double-sided polishing, used in the manufacture of optical filters SECURITY SYSTEMS. WASTE NO:. SHANGHAI BOSUN IMPORT & EXPORT CO, LTD BOSUN ABSENT ABSENT otsutst | *** | CHINA | 180 | 20190 | *** | ***** | ***** |
| 2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.17 | 3617,25 | *** | ***** | ***** |
| 2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 2 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.03 | 1559,25 | *** | ***** | ***** |
| 2017-09-18 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; METHOD OF GROWING: CZ; CONDUCTIVITY TYPE: N; Went | *** | CHINA | 14.4 | 2955,47 | *** | ***** | ***** |
| 2017-09-18 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished, gratuitous POSTAKVA AS SAMPLES: silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; MET | *** | CHINA | 18 | 3789,85 | *** | ***** | ***** |
| 2017-09-23 | 3818009000 | OTHER Chemical elements doped (indium arsenide), intended for use in electronics in the form of discs with a diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box,: idea | *** | CHINA | 5 | 7500 | *** | ***** | ***** |
| 2017-11-02 | 3818001000 | Silicon doped with boron, a plate circular diameter of 100mm, with double-sided polishing, used in the manufacture of optical filters SECURITY SYSTEMS. DO NOT WASTE | BOSUN | CHINA | 180 | 20190 | ST PETERSBURG | ***** | ***** |
| 2017-11-08 | 3818001000 | Silicon is alloyed in the form of a plate of 300 mm diameter | ABSENT | CHINA | 6 | 880,05 | MOSCOW | ***** | ***** |
| 2017-11-15 | 3818001000 | DOPED SILICON FOR MANUFACTURING SEMICONDUCTOR DEVICES AND CIRCUITS - silicon wafer conductivity type N, a 150 mm diameter, THK. MCM 625 + -15, 15.2 UD.SOPROTIVLENIE OM / MM | BENETEK | CHINA | 1 | 783,33 | HONG KONG | ***** | ***** |
| 2017-11-22 | 3818009000 | Chemical elements doped - indium arsenide for use in electronics, in the form of discs DIAMETER 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, THEN | ABSENT | CHINA | 0.12 | 4500 | MOSCOW | ***** | ***** |