DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-07 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 PP + R10-13 / T5.5-6.5 diameter 200 mm, P + type (boron doped). INTENDED FOR USE IN THE PRODUCTION OF INTEGRATED CIRCUITS. SUM | *** | JAPAN | 2.6 | 4111,39 | *** | ***** | ***** |
2017-09-11 | 3818001000 | High-resistivity silicon wafer. Diameter of 100 mm, thickness of 460 microns. SOURCE MATERIAL FOR MANUFACTURING CRYSTAL INTEGRATED CIRCUITS: GREAT ASCENT INTERNATIONAL LIMITED GREAT ASCENT INTERNATIONAL LIMITED 100 | *** | JAPAN | 2.4 | 7170 | *** | ***** | ***** |
2017-09-11 | 3818009000 | CHEMICAL COMPOUNDS DOPED: semiconductor epitaxial layer structure of gallium nitride semi-insulating substrate silicon carbide circular plate with a diameter of 3 inches. It used to build electronic equipment, FOR: FOLLOW | *** | JAPAN | 1.8 | 14024,16 | *** | ***** | ***** |
2017-09-12 | 3818001000 | Silicon is alloyed with a plate round shapes of different diameters, for use in electronics for the production of photovoltaic converters and SOLID-STATE ELECTRONIC DEVICES: //-ART.RLM500-01 - 218SHT, ART.RLM501-01 - 216SHT | *** | JAPAN | 27 | 1354,08 | MOSCOW | ***** | ***** |
2017-09-22 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 P CZ100 R12 T725 WP07 is purified SILICON, monocrystalline, plate-shaped diameter 200 mm, p type (boron-doped) P | *** | JAPAN | 15.9 | 12861,65 | *** | ***** | ***** |
2017-09-26 | 3818009000 | The semiconductor wafer (substrate) for the manufacture of heteroepitaxial structures. SHAPED disk diameter (50.0-100.0 +/- 0.3 mm) and 0.35-0.45 +/- 0.015-0.025 THICKNESS MM) doping chemicals. INTENDED TO BASE rogue | *** | JAPAN | 15.4 | 29750 | *** | ***** | ***** |