DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-04 | 3818001000 | Silicon doped with boron, a plate circular diameter of 100mm, with double-sided polishing, used in the manufacture of optical filters SECURITY SYSTEMS. WASTE NO:. SHANGHAI BOSUN IMPORT & EXPORT CO, LTD BOSUN ABSENT ABSENT otsutst | *** | CHINA | 180 | 20190 | *** | ***** | ***** |
2017-09-07 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 PP + R10-13 / T5.5-6.5 diameter 200 mm, P + type (boron doped). INTENDED FOR USE IN THE PRODUCTION OF INTEGRATED CIRCUITS. SUM | *** | JAPAN | 2.6 | 4111,39 | *** | ***** | ***** |
2017-09-11 | 3818001000 | High-resistivity silicon wafer. Diameter of 100 mm, thickness of 460 microns. SOURCE MATERIAL FOR MANUFACTURING CRYSTAL INTEGRATED CIRCUITS: GREAT ASCENT INTERNATIONAL LIMITED GREAT ASCENT INTERNATIONAL LIMITED 100 | *** | JAPAN | 2.4 | 7170 | *** | ***** | ***** |
2017-09-12 | 3818001000 | Silicon is alloyed with a plate round shapes of different diameters, for use in electronics for the production of photovoltaic converters and SOLID-STATE ELECTRONIC DEVICES: //-ART.RLM500-01 - 218SHT, ART.RLM501-01 - 216SHT | *** | JAPAN | 27 | 1354,08 | MOSCOW | ***** | ***** |
2017-09-18 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; METHOD OF GROWING: CZ; CONDUCTIVITY TYPE: N; Went | *** | CHINA | 14.4 | 2955,47 | *** | ***** | ***** |
2017-09-18 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished, gratuitous POSTAKVA AS SAMPLES: silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; MET | *** | CHINA | 18 | 3789,85 | *** | ***** | ***** |
2017-09-22 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 P CZ100 R12 T725 WP07 is purified SILICON, monocrystalline, plate-shaped diameter 200 mm, p type (boron-doped) P | *** | JAPAN | 15.9 | 12861,65 | *** | ***** | ***** |
2017-09-29 | 3818001000 | Silicon is alloyed with a disc-shaped, intended for use in electronics: the electrode in the form of a disc diameter of 8 "is used in etching of dielectric Electronic devices LAM AT surface of the semiconductor silicon wafers LAM MATERIAL. KRE | *** | TAIWAN CHINA | 7.44 | 12575,52 | *** | ***** | ***** |
2017-11-02 | 3818001000 | Silicon doped with boron, a plate circular diameter of 100mm, with double-sided polishing, used in the manufacture of optical filters SECURITY SYSTEMS. DO NOT WASTE | BOSUN | CHINA | 180 | 20190 | ST PETERSBURG | ***** | ***** |
2017-11-08 | 3818001000 | Silicon is alloyed in the form of a plate of 300 mm diameter | ABSENT | CHINA | 6 | 880,05 | MOSCOW | ***** | ***** |