Diamete Import Data of Russia

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Find trade data and market research report on diamete imports under HS Code 3818009000 and follow up market price of diametes. Know market share of companies importing diamete under HS Code 3818009000

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-01	3818009000	SINGLE CRYSTAL PLATE high resistivity gallium arsenide compensate CHROME (GAAS: CR), NOT polished 4-inch diameter (102 +/- 0.5 mm), the thickness of 800 +/- 20 microns, is intended for manufacturing detectors (sensors) REGISTRATION:: ::::	***	RUSSIA	1.5	2385,26	***	*****	*****
2017-09-05	3818009000	Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL	***	TAIWAN CHINA	0.68	31394,35	***	*****	*****
2017-09-08	3818009000	CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor	***	CHINA	0.17	3617,25	***	*****	*****
2017-09-08	3818009000	CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 2 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor	***	CHINA	0.03	1559,25	***	*****	*****
2017-09-11	3818009000	CHEMICAL COMPOUNDS DOPED: semiconductor epitaxial layer structure of gallium nitride semi-insulating substrate silicon carbide circular plate with a diameter of 3 inches. It used to build electronic equipment, FOR: FOLLOW	***	JAPAN	1.8	14024,16	***	*****	*****
2017-09-12	3818009000	A semiconductor wafer of gallium arsenide-SHAPED discs with a diameter of 50.8 MM is intended for use as a raw material for the manufacture of semiconductor devices ELECTRONICS by spraying and superfine ultrapure semiconductors	***	UNITED STATES	1.35	1278,38	Vilnius Lithuania	*****	*****
2017-09-23	3818009000	OTHER Chemical elements doped (indium arsenide), intended for use in electronics in the form of discs with a diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box,: idea	***	CHINA	5	7500	***	*****	*****
2017-09-26	3818009000	The semiconductor wafer (substrate) for the manufacture of heteroepitaxial structures. SHAPED disk diameter (50.0-100.0 +/- 0.3 mm) and 0.35-0.45 +/- 0.015-0.025 THICKNESS MM) doping chemicals. INTENDED TO BASE rogue	***	JAPAN	15.4	29750	***	*****	*****
2017-11-07	3818009000	CHEMICAL COMPOUNDS Alloy: a semiconductor substrate of gallium arsenide, ligated silicon, the conductivity type N, the circular plate 2 inch diameter (50.8 mm), thickness 350 microns, INTENDED FOR USE IN MICROELECTRONICS	WITHOUT A TRADEMARK	***	0.272	5145	ST PETERSBURG	*****	*****
2017-11-17	3818009000	CHEMICAL COMPOUNDS LEGIROVANNYE: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and	ABSENT	***	0.093	1947,75	ST PETERSBURG	*****	*****

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