DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-01 | 8541210000 | TRANSISTORS power dissipation LESS THAN 1W. Maximum voltage 30V RESERVOIR: SHENZHEN QIYAO PLASTIC & ELECTRONIC CO, LTD.. MMUN2211LT1 (SOT-23) 1,000 | *** | CHINA | 0.06 | 171,3 | *** | ***** | ***** |
2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,30VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | THAILAND | 0.97 | 285,76 | *** | ***** | ***** |
2017-09-01 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 Watt (NOT SCRAP ELECTRIC OR ELECTRICAL COMPONENTS FOR CIVIL USE) TRANSISTOR SEMICONDUCTOR power dissipation 0,3VT for consumer electronics. TYPE semisimple | *** | CHINA | 4 | 1004,75 | *** | ***** | ***** |
2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NEXPERIA BV NEXPERIA PDTC114ET.215 PDT | *** | MALAYSIA | 3.6 | 913,31 | *** | ***** | ***** |
2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,54VT for consumer electronic devices. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) INFINEON TECHNOLOGIES AG INFI | *** | JAPAN | 0 | 2,24 | *** | ***** | ***** |
2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,31VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel DIOTEC SEMICONDUCTOR AG DIOTEC BC807-40 | *** | JAPAN | 0.01 | 5,91 | *** | ***** | ***** |
2017-09-01 | 8541210000 | Bipolar transistors, power 0,9VT. For electronic devices. Packed in a cardboard box together with other goods. NOT FOR RETAIL. : ASUS ASUS ASUS 07005-A0340000 NO 59 | *** | CHINA | 0.59 | 20,06 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 0.5 | *** | CHINA | 1.19 | 90 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 0.57 | *** | CHINA | 0 | 4 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 0.54 | *** | CHINA | 0.01 | 10,2 | *** | ***** | ***** |