DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 50 W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STL11N3LLH6 B / N 2 | *** | CHINA | 0 | 2,3 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation 27.7 BT: bipolar transistor power dissipation 15W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STD2805T4 B / H 2 VISHA | *** | CHINA | 0.01 | 3,63 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistors, EXCEPT phototransistor (SCRAP ELECTRIC OR ELECTRICAL COMPONENTS FOR CIVIL USE) SEMICONDUCTOR TRANSISTOR 80W power dissipation for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon | *** | CHINA | 6.05 | 411,06 | *** | ***** | ***** |
2017-09-01 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 1,7VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) VISHAY INTERTECHNOLOGY INC. VI | *** | CHINA | 0 | 13 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistors, phototransistor EXCEPT: Transistor SEMICONDUCTOR ASSEMBLY TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices, power: 4 W DISPERSION NXP SEMICONDUCTORS NXP NXP NX745537715 | *** | CHINA | 1.8 | 40,14 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 45 W | *** | CHINA | 0.02 | 24,8 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 125 | *** | CHINA | 1.05 | 146 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode | *** | CHINA | 1.98 | 291 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, 150 V power dissipation | *** | CHINA | 1.4 | 156,15 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode | *** | CHINA | 0.52 | 60 | *** | ***** | ***** |