| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8542323100 | The storage device of electronic integrated: dynamic random access memory device comprising 64MBT MEMORY is a circuit electronic integrated monolithic SDRAM MEMORY CHIPS, The plastic housing With 90 VYVODAMI.NA ON | *** | CHINA | 1.95 | 895,74 | *** | ***** | ***** |
| 2017-09-02 | 8542323100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of up to 256 Mbit Maximum Clock Frequency. | *** | CHINA | 0.02 | 40 | *** | ***** | ***** |
| 2017-09-02 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with memory volume to 64 MBIT, a maximum operating frequency | *** | CHINA | 0 | 3 | *** | ***** | ***** |
| 2017-09-05 | 8542323100 | Electronic integrated circuits: dynamic memory (DRAM), 256Mb, voltage 3.6 V, frequency 143 MHz, MICRON TECHNOLOGY INC MICRON TECHNOLOGY, CHINA MICRON TECHNOLOGY, CHINA MT48LC8M32B2TG-7IT MEMORY 20 | *** | CHINA | 0.01 | 195,42 | *** | ***** | ***** |
| 2017-09-06 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT without departing NOT JOM, memory 256 MBIT: MICRON MICRON MT48LC32M8A2P-6A: G MT48LC32M8A2P-6A: G | *** | CHINA | 0.9 | 2205,76 | *** | ***** | ***** |
| 2017-09-08 | 8542323100 | ELECTRONIC INTEGRATED CIRCUITS SINGLE monolithic, not combined with other components that are not for fire control, NOT MILITARY NOT SCRAP ELECTRIC; Designed for mounting dynamic random access memory (DRAM) | *** | CHINA | 0.37 | 206,64 | *** | ***** | ***** |
| 2017-09-12 | 8542323100 | Integrated circuits, monolithic, have no function encryption (CRYPTOGRAPHY), dynamic random access memory (DRAM), not radiation. NOT SCRAP ELECTRIC. MEMORY SIZE 64 MBIT. APPLICATION: CONSTRUCTION RADIOELECTRONIC: Equips | *** | CHINA | 2.15 | 7468,52 | *** | ***** | ***** |
| 2017-09-13 | 8542323100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - dynamic random access memory (DRAM) DRAM with a storage capacity of 512 MBIT. (Operating temperature range: -45 ... + 85 ° C) (NOT SCRAP ELECTRIC): ALLIANCE MEMORY, INC. WITHOUT A TRADEMARK B / | *** | CHINA | 0.01 | 46,79 | *** | ***** | ***** |
| 2017-09-13 | 8542323100 | Diagram of an electronic, integrated, dynamic random access memory, with a storage capacity to 512 Mbit NOT combined with other schemes that do not have the encryption function is used for mounting and repair of household electronic Appar: MIC | *** | CHINA | 0.1 | 109,67 | *** | ***** | ***** |
| 2017-09-20 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT without departing NOT JOM, memory 256 MBIT: MICRON MICRON MT48LC32M8A2P-6A: G MT48LC32M8A2P-6A: G | *** | CHINA | 0.09 | 99,3 | *** | ***** | ***** |