Electro Import Data of Russia

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Lookup import statistics of Electro under HS Code 8542323900, which Russia imports from China. Study market price & market size of Electro along with market share of Russian companies importing Electro from China

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-02	8542323900	MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with memory volume to 4 GB, a maximum frequency of 12	***	CHINA	0.11	149,6	***	*****	*****
2017-09-02	8542323900	MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity to 16 GB, the maximum operating frequency of 6	***	CHINA	0.76	2362,5	***	*****	*****
2017-09-02	8542323900	MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of 2 GB to, a maximum frequency of 40	***	CHINA	0.06	231	***	*****	*****
2017-09-02	8542323900	MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of 2 GB to, maximum operating frequency of 13	***	CHINA	0.01	18	***	*****	*****
2017-09-06	8542323900	MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, MEMORY 4Gbit: MICRON MICRON MT41K256M16TW-107 AIT: P MT41K256M16TW-107 A	***	CHINA	0.09	73,39	***	*****	*****
2017-09-12	8542323900	MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, memory 4 HBT: MICRON MICRON EDB4432BBPA-1D-FR EDB4432BBPA-1D-FR EDB44	***	CHINA	4	5094,59	***	*****	*****
2017-09-12	8542323900	Electronic integrated circuits, monolithic: dynamic random access memory (DRAM), collected, SINGLE, memory 2Gbps; NOT SCRAP electrical equipment, not military purposes; INTENDED SMD on the circuit: BOARD	***	CHINA	2.41	1008	***	*****	*****
2017-09-21	8542323900	MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - dynamic random access memory (DRAM) DRAM with a storage capacity of 2 Gbit. (Operating temperature range: -40 ... + 85 Â° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK B / N MT47	***	CHINA	0.06	303,24	***	*****	*****
2017-09-26	8542323900	Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI	***	CHINA	7.68	14215,2	***	*****	*****
2017-09-26	8542323900	Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI	***	CHINA	88.32	163474,8	***	*****	*****

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Our electro import data of Russia and market research report covers market priceof electro and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of electro in Russia. Few shipment records with a small number of important columns from Russia import data of electro are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of electro. To view more shipment records of electro import data of Russia, you can set a filter by Country Name, HS Code and Place.

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