DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): XILINX INC XILINX B / N XCF04SVO20C B / 24 H | *** | CHINA | 0 | 193,49 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity 8Mbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT TRADEMARK B / N S29AL008J70TF | *** | CHINA | 0.01 | 39,07 | *** | ***** | ***** |
2017-09-01 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS AND OTHER NON JOM EQUIPMENT NOT CONTAIN encryption function (CRYPTOGRAPHY); SCOPE: TELECOM. EQUIPMENT; MEMORY (FLASH EEPROM), of the body-16 Kbps, voltage, 4.5-5.5 (B) REFERENCE: AT28C16-15PI, ALL MICROCHIP, MAL | *** | CHINA | 0.01 | 23,95 | *** | ***** | ***** |
2017-09-01 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0.74 | 2362,6 | *** | ***** | ***** |
2017-09-01 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0.44 | 187,39 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 256Mb is approved for use in telecommunications equipment. LIVE PIT | *** | CHINA | 0.01 | 35,82 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 64 Mbit is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.05 | 25 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16Mb is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.01 | 2,7 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16Mb is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.01 | 13,63 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH Memory capacity of 1 Mbit is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 4.94 | 3900 | *** | ***** | ***** |