DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326900 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 8192MEGABIT for wide application in industrial equipment NOT WAR H | *** | CHINA | 0.01 | 101,68 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 128 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.02 | 39,6 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 32 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.09 | 90 | *** | ***** | ***** |
2017-09-03 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory DEVICE | *** | CHINA | 1.02 | 2807,42 | *** | ***** | ***** |
2017-09-05 | 8542326900 | Electronic integrated circuits, electrically erasable programmable read-only memory (EEPROM), for applications in microelectronics: chip flash memory 1.8V 1G-BIT MICRON TECHNOLOGY INC. 172 MICRON MICRON PC28F00AP30TFA | *** | CHINA | 0.84 | 1189,96 | *** | ***** | ***** |
2017-09-05 | 8542326900 | Electronic integrated circuits: flash memory (flash-ES PROM), 2 GB, voltage 3.6 V, current 30 mA, SAMSUNG ELECTRO-MECHANICS SAMSUNG ELECTRO-MECHANICS, KOREA, REPUBLIC OF SAMSUNG ELECTRO-MECHANICS, Korea, Republic of K9K8G08U0M-PIB0 MEMORY 20 | *** | CHINA | 0.01 | 174,35 | *** | ***** | ***** |
2017-09-12 | 8542326900 | Electronic integrated circuits, monolithic not integrated with other components SINGLE: an electrically erasable programmable read only memory (FLASH-EPROM ES) COLLECTED: C 2Gbit amount of memory; NOT SCRAP electrical equipment, not | *** | CHINA | 0.39 | 539,92 | *** | ***** | ***** |
2017-09-12 | 8542326900 | Electronic integrated circuits, monolithic not integrated with the other components: an electrically erasable programmable read only memory (FLASH-EPROM ES) COLLECTED, SINGLE, with a storage capacity 64GBIT; NOT SCRAP: Electrical, | *** | CHINA | 0.45 | 5020,56 | *** | ***** | ***** |
2017-09-12 | 8542326900 | Electronic integrated circuits, monolithic not integrated with other components SINGLE: an electrically erasable programmable read only memory (FLASH-EPROM ES) assembled, with volume MEMORY 8 Gbit; NOT SCRAP: Electrical, | *** | CHINA | 2.66 | 11986,5 | *** | ***** | ***** |
2017-09-25 | 8542326900 | Electronic integrated monolithic circuit intra-PROGRAMMABLE configuration memory PROM ES is approved for use in telecommunications equipment for PCB IC flash memory, memory capacity 1 GB (256M * 4), tact | *** | CHINA | 0.6 | 2712,86 | *** | ***** | ***** |