DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8541409000 | Photosensitive semiconductor devices, TYPE SEMICONDUCTOR - SILICON. Used in the manufacture electronic modules and dresses for various devices. NOT FOR MILITARY USE. : DESCRIPTION: COMPACT LOW-VOLTAGE SOLID-STATE SWITCHES OPTO-HOUSING | *** | PHILIPPINES | 50 | 47474,5 | *** | ***** | ***** |
2017-09-04 | 8541290000 | TRAHZISTORY SEMICONDUCTOR, half-bridge, bipolar, high voltage. PURPOSE: inverters, switching power supplies. SCOPE: AUTOMATED SYSTEMS AND CONTROL CIVIL PROMYSHLENNYHOBEKTOV. Is not discrete: AP | *** | PHILIPPINES | 6 | 1760 | *** | ***** | ***** |
2017-09-04 | 8541290000 | TRANSISTOR, P / N IRFP4368PBF, MOSFET, N-CHANNEL CONTINUOUS FLOW CURRENT 350A, VOLTAGE SOURCE DRAIN 75B, a maximum temperature of 175 ° C, power dissipation BT 520, applied in automotive industry. DOES NOT CONTAIN THE FUNCTIONS: Encryption (K | *** | PHILIPPINES | 0.14 | 83,19 | *** | ***** | ***** |
2017-09-04 | 8541290000 | TRANSISTOR, P / N IPW60R017C7XKSA1, HIGH VOLTAGE MOSFET, the breakdown voltage of the drain-source of 600 V, the power dissipation 227VT applicable in fabrication of electronic Aparatura, server and telecommunication power supplies, adapters: LEU | *** | PHILIPPINES | 0.17 | 249,58 | *** | ***** | ***** |
2017-09-04 | 8541210000 | TRANSISTOR, P / N NX3008NBKS, MOS transistors, the number of channels 2, the breakdown voltage of the drain-source 30, continuous current LEAKAGE 350 MA - 1,4 SOURCE DRAIN RESISTANCE OM VOLTAGE gate-source 8, the minimum operating temperature - 55 C, MAX: Working | *** | PHILIPPINES | 0.24 | 606,13 | *** | ***** | ***** |
2017-09-04 | 8541210000 | TRANSISTOR, P / N BD140-16, a bipolar transistor BJT, the maximum voltage 80 V COLLECTOR emitter, collector voltage BASE 80 V BASE TENSION emitter 5 V, a maximum constant collector current 1,5A, gain-: WIDTH ON | *** | PHILIPPINES | 4.28 | 203,38 | *** | ***** | ***** |
2017-09-05 | 8541100009 | Semiconductor diodes With the function of stabilizing voltage levels in SCHEME electricity meter, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NO MILITARY OR DUAL-USE / / Not for equipment operating in explosive atmospheres / ON SEMICONDUCTOR O | *** | PHILIPPINES | 0.47 | 669 | *** | ***** | ***** |
2017-09-06 | 8541100009 | PROTECTION DIODES "SMBJ30A-TR", Predna. To suppress the surge voltage in the consumer, industrial electronics and telecommunications. TYPE SEMICONDUCTOR SILICON. : MAX 600W power dissipation, breakdown voltage of 36,8V. INTENDED FOR suppressed | *** | PHILIPPINES | 0.44 | 200 | *** | ***** | ***** |
2017-09-06 | 8541100009 | DIODES - REFERENCE "BZX84C4V7LT1G", "BZX84C12LT1G"; - UNIVERSAL "BAS21LT1G". TYPE SEMICONDUCTOR SILICON. : MAXIMUM power dissipation of 250 mW; Operating voltage range (NO.) From 2.4 to 75 V. INTENDED FOR UNIVERSAL APPLICATION FUNCTIONS | *** | PHILIPPINES | 0.4 | 83,4 | *** | ***** | ***** |
2017-09-06 | 8541210000 | P-CHANNEL POWER MOS TRANSISTORS "FDN5618P", C 0.5 Tu power dissipation, drain-source voltage 60 V, gate-source voltage 20B, Imp. Drain current 10A, Predna. FOR A current converters, switches, loads diagram of the control PI: TA | *** | PHILIPPINES | 0.13 | 165 | *** | ***** | ***** |