DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-07 | 8541100009 | DIOD MBRB20100CTG - Schottky diodes. Type of installation - SMD / SMT. CONTINUOUS Forward Current - 20 A; Peak Reverse Voltage - 100V Forward Voltage: 0,95V; Operating temperature range: - 65 C + 175 C. INTENDED FOR USE BY | ABSENT | *** | 2.142 | 424,13 | KAZAN | ***** | ***** |
2017-11-07 | 8541100009 | DIOD MURS160T3G - FAST rectifier diodes. Type of installation - SMD. Reverse voltage - 600V; Forward Voltage: 1,25V; MAXIMUM CONTINUOUS DIRECT CURRENT - 2 A; Operating temperature range: - 65 C + 175 C. INTENDED FOR USE BY | ABSENT | *** | 7.218 | 1607,98 | KAZAN | ***** | ***** |
2017-11-07 | 8541100009 | LIMITER SMAJ13A-TR - is a unidirectional suppressor diodes. Type of installation - SMD. FIKSATSII- VOLTAGE 27.2 V; WORKING stress- 13; VOLTAGE PROBOYA- 14.4; PEAK CURRENT 1 PEREGRUZKI- MA; PEAK Pulse Power Dissipation - 400 | ABSENT | *** | 3.501 | 967,12 | KAZAN | ***** | ***** |
2017-11-07 | 8541100009 | LIMITER SMCJ18CA-TR is a unidirectional protection diodes. TYPE OF INSTALLATION - SMD. VOLTAGE FIKSATSII- 21; WORKING stress- 18; Peak current PEREGRUZKI- 1 ICA. Designed for use on its own production. | ABSENT | *** | 3.492 | 873,9 | KAZAN | ***** | ***** |
2017-11-07 | 8541290000 | TRANSISTOR SPW17N80C3FKSA1 - TRANSISTOR N-channel powerful FIELD. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". MAXIMUM power dissipation - 227 Tues The breakdown voltage of the drain-source 800 W. Drain Current 17 A MAXIMUM | ABSENT | *** | 40.158 | 10335,79 | KAZAN | ***** | ***** |
2017-11-07 | 8541290000 | FIELD TRANSISTOR IRLR120NPBF TIR (metal- insulator - SEMICONDUCTOR) MOSFET, N-CHANNEL, high power (> 1W). TYPE OF MOUNTING - SURFACE. VOLTAGE Drain-Source Breakdown - 100 V; The breakdown voltage of the gate-source - 16 V; Power Dissipation | ABSENT | *** | 1.332 | 471,91 | KAZAN | ***** | ***** |
2017-11-07 | 8541290000 | TRANSISTOR SPP20N65C3XKSA1 - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM power dissipation - 208 W; The breakdown voltage of the drain-source - 650; Drain current | ABSENT | *** | 4.122 | 2936,31 | KAZAN | ***** | ***** |
2017-11-07 | 8541290000 | TRANSISTOR IRF7842PBF - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM POWER OF DISPERSION - 2.5 W; The breakdown voltage of the drain-source - 40 V; The drain current of 18 A. | ABSENT | *** | 0.504 | 338,7 | KAZAN | ***** | ***** |
2017-11-07 | 8541290000 | TRANSISTOR IPB009N03LGATMA1 - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM power dissipation - 250 W; The breakdown voltage of the drain-source - 30 V; Drain current | ABSENT | *** | 2.745 | 1037,03 | KAZAN | ***** | ***** |
2017-11-10 | 8541290000 | TRANSISTOR FQD19N10TM semiconductor metal-oxide-FILM WITH N-type channels are intended for use in the pulse converter voltage to power LED lamps produced by LLC "LEDEL". APPLY power supply (DRIVE | ABSENT | *** | 5.145 | 2031,58 | KAZAN | ***** | ***** |