DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-07 | 8541401000 | Light-emitting diodes for voltage 12V, different brands, WITHOUT POWER SUPPLY, power cords and switches, located on the tape from hardboard, which is wound on a plastic KATUSHKU.PREDNAZNACHENY for commuting | HANGZHOU SEN XUNLONG EL0CTRONICS | *** | 55 | 15190 | ST PETERSBURG | ***** | ***** |
2017-09-07 | 8541100009 | DIODES: FLAT Small signal semiconductor diodes "LL4148-GS08" On the maximal periodic reverse voltage 100V and periodic peaks direct current to 500 mA. TYPE SEMICONDUCTOR - SILICON. | VISHAY | *** | 57.2 | 3579,6 | ST PETERSBURG | ***** | ***** |
2017-09-08 | 8541401000 | LEDS LED (TYPE SEMICONDUCTOR SILICON), the maximum voltage 24 V for SMD printed circuit boards. | ABSENT | *** | 135.7 | 124245,6 | ST PETERSBURG | ***** | ***** |
2017-09-09 | 8541401000 | Light-emitting diodes - LED modules, embedded for use in electric lamps, for voltage 27-32B | ABSENT | *** | 472.26 | 159745 | ST PETERSBURG | ***** | ***** |
2017-09-17 | 8541100009 | DIODES: ultrafast rectifier DIODES "MUR820G" C direct current 8A, C MAX. DC voltage 200V; Zener diode (Zener diode) SERIES "BZV55" - "BZV55-C15,115" and "BZV55-C6V2,115" On Operating voltage 2.4V to 75V. TYPE SEMICONDUCTOR - CREAM | ON SEMICONDUCTOR | *** | 65.1 | 7312,4 | ST PETERSBURG | ***** | ***** |
2017-09-17 | 8541300009 | Thyristor with peak off-state voltage to 600V 8-A thyristor "TS820-600T" C INCLUSION sensitivity level, GATE CIRCUIT CURRENT 0.2 milliamperes; SCR "P0102MN 5AA4" With SHOCK WHEN OPEN TO 0.8A, Voltage | ST | *** | 82.3 | 8163 | ST PETERSBURG | ***** | ***** |
2017-09-17 | 8541290000 | MOSFET N-CHANNEL "TK6A65D (STA4, Q, M)" C dissipation 45W, drain-source voltage 650V, DIRECT CURRENT FLOW 6A. Designed for use in switching regulator VOLTAGE. TYPE SEMICONDUCTOR - SILICON. | TOSHIBA | *** | 185.92 | 13205 | ST PETERSBURG | ***** | ***** |
2017-09-17 | 8541290000 | AVERAGE POWER TRANSISTORS: N-CHANNEL "TK10A80W, S4X (S" COMMON dissipation 40W, collector-emitter voltage 80V and the breakdown voltage of the drain-source 800V TYPE SEMICONDUCTOR - SILICON.. | TOSHIBA | *** | 107.645 | 23370 | ST PETERSBURG | ***** | ***** |
2017-09-23 | 8541100009 | DIODES. Used in industrial electronics and automation as an integral component. RABOCHNEE voltage up to 1000V. NOT SCRAP ELECTRONIC EQUIPMENT. | VISHAY | *** | 219 | 22212 | ST PETERSBURG | ***** | ***** |
2017-09-26 | 8541290000 | UNIVERSAL Bipolar Transistor "VD140-16" With the PNP-TRANSITION, with a total power dissipation 12.5 BT, collector-emitter voltage 80V, 1.5A DIRECT CURRENT COLLECTOR, intended for use in linear amplifiers and switches APPENDIX | ST | *** | 66.3 | 2429,43 | ST PETERSBURG | ***** | ***** |