DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-04 | 8541290000 | TRANSISTOR FOR SEMICONDUCTOR PCB mounting. 1. The number of channels drain-source voltage of 30 V .: gate-source voltage of 2.2 V. 39 CONTINUOUS LEAKAGE CURRENT AMP. Resistance Drain-10 IOM. Power dissipation 28 VT.DIAPAZON THOSE WORKERS | *** | GERMANY | 0.08 | 1,95 | *** | ***** | ***** |
2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation 136 VT, the voltage source-drain 250, the drain current of 25 A, HULL TYPE TO-263-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | GERMANY | 0.17 | 141,26 | *** | ***** | ***** |
2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOS TRANSISTOR N-CHANNEL, power dissipation BT 96, current 100 A, voltage 40 V CLASSIFICATION CODE 3417831 is for use in switching power supply, inverters INFINEON TECHNOLOGIES AG INFIN | *** | GERMANY | 0.06 | 160,25 | *** | ***** | ***** |
2017-09-13 | 8541290000 | BIPOLAR TRANSISTORS VOLTAGE 45 V: the bipolar transistor 40 V FETs OPERATING VOLTAGE 37 NEXPERIA WITHOUT TK B / M BCX71H, 215 B / M 10 VISHAY SILICONIX WITHOUT TK B / M SI4835DDY-T1-GE3 B / M 10 ON SEMICONDUCTOR WITHOUT TK B / M MBT3904DW1T1G | *** | GERMANY | 0.05 | 17,13 | *** | ***** | ***** |
2017-09-13 | 8541290000 | Transistors, EXCEPT phototransistor is used as a component of other technical equipment and not intended for independent use: TRANSISTOR, voltage 300V, current 0,5A, power dissipation of 1 watt. They are used as SOS | *** | GERMANY | 36 | 14569,26 | *** | ***** | ***** |
2017-09-18 | 8541290000 | Modules insulated-gate bipolar transistor (IGBT) "FF900R12IP4" With powerful. DISPERSION 5100 W, collector-emitter voltage 1200V, gate-emitter voltage 20V. TYPE SEMICONDUCTOR SILICON. : INTENDED FOR USE IN SUBSIDIARY | *** | GERMANY | 9.35 | 2789,28 | *** | ***** | ***** |
2017-09-22 | 8541290000 | Transistors, bipolar with insulation. SHUTTER FOR POWER commercial power supply, in a modular design, in the case of type-3 SEMITRANS, IGBT-transistor for voltages 1.7KV, CURRENT 400A: Power Dissipation 2.5 KW: NOT SCRAP, civil application / unit | *** | GERMANY | 3 | 2306,47 | *** | ***** | ***** |
2017-09-22 | 8541290000 | Transistors, bipolar with insulation. SHUTTER FOR POWER commercial power supply in a modular design, in the case of type-3 SEMITRANS, IGBT-transistor for voltages 1.7KV, 400A CURRENT: 3 kW power dissipation: (NOT SCRAP, CIVIL) PS | *** | GERMANY | 1.5 | 939,11 | *** | ***** | ***** |
2017-09-22 | 8541290000 | Transistors, bipolar with insulation. SHUTTER FOR POWER SOURCES POWER INDUSTRIAL EQUIPMENT, in modular design HOUSING IGBT-transistors for voltage 1.2KV, CURRENT 900A: Power Dissipation 4.8 KW: NOT SCRAP, civil application / unit | *** | GERMANY | 10 | 19376,8 | *** | ***** | ***** |
2017-09-26 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET P-CHANNEL, power dissipation of 1.5 W, the voltage source-drain 20 V, the drain current of 10 A, HULL TYPE SOIC-8 CLASSIFICATION CODE 3417831 is for use in switching power supply, transformation | *** | GERMANY | 0.44 | 132,9 | *** | ***** | ***** |