| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: N-channel MOSFET transistors TYPE SEMICONDUCTOR - silicon, the SRT-VOLTAGE SOURCE 65V output power of 60W, the working speed of 1GHz, power dissipation 79VT, drain current 7A. STMICROELECTRONICS NV | *** | JAPAN | 0.03 | 192,56 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Transistors, EXCEPT phototransistor power dissipation 1 W: POWER MODULE IGBT (transistor) for frequency conversion AC EEKTROTOKA in engines, electrical PRIBORAHMOSCHNOST DISPERSION 1.3 KW, the maximum voltage COLLECT | *** | JAPAN | 87.76 | 25691,28 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | SEMICONDUCTOR BIPOLAR TRANSISTOR. The collector current of 80 A. -EMITTER collector voltage of 300 V. Power Dissipation 400W. PRIMENENIE- INDUSTRIAL AND CONSUMER ELECTRONICS:: IXYS INTEGRATED CIRCUITS. PHILIPPINES IXYS INTEGRATED CIRCUITS IXBT32N300HV I | *** | JAPAN | 0.17 | 1,92 | *** | ***** | ***** |
| 2017-09-10 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: MOSFET-TRANSISTORS, N-CHANNEL USED IN INSTRUMENT for surface mounting. TYPE SEMICONDUCTOR - SILICON, voltage 650 V, power dissipation of 660 Tues IXYS IXYS IXYS NO I | *** | JAPAN | 8.21 | 650,92 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 V | *** | JAPAN | 0.01 | 22,46 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. Calculated on the breakdown voltage of 20 V, | *** | JAPAN | 0.01 | 19,42 | *** | ***** | ***** |
| 2017-09-19 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET P-CHANNEL, power dissipation is 39 W, the voltage source-drain 20 V, the drain current of 50 A, HULL TYPE PPAK-SO8, CLASSIFICATION CODE 3417831 is for use in SMPS converts | *** | JAPAN | 0.02 | 47,28 | *** | ***** | ***** |
| 2017-09-20 | 8541290000 | Other transistors, phototransistors EXCEPT: MOS TRANSISTOR ROHS: corresponding view INSTALLATION: MOS TRANSISTOR NUMBER CHANNEL 1 CHANNEL TRANSISTOR POLARITY: N-CHANNEL VDS - breakdown voltage of the drain-source: 150 V ID - CONSTANT CURRENT LEAKS: 78 A RDS ON | *** | JAPAN | 12.87 | 3670,58 | *** | ***** | ***** |
| 2017-09-20 | 8541290000 | Other transistors EXCEPT phototransistor: MOSFET Transistor Polarity: N-CHANNEL VDS - breakdown voltage of the drain-source: 250 V ID - CONSTANT CURRENT LEAKS: 57 A RDS ON - resistance of the drain-source 33 MOHMS VGS - gate-source voltage: 30 V PD - | *** | JAPAN | 0.3 | 389,65 | *** | ***** | ***** |
| 2017-09-20 | 8541290000 | Other transistors EXCEPT phototransistor: MOS TRANSISTOR TYPE ASSEMBLY: SMD / SMT PACKAGING / UNIT: SO-8 NUMBER OF CHANNELS 2 POLARITY TRANSISTOR: N VDS - breakdown voltage of the drain-source 30 V PD - power dissipation: 2 W ID - CONTINUOUS CURRENT LEAKS: 4.9 | *** | JAPAN | 11.5 | 3415,01 | *** | ***** | ***** |