DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-15 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-channel available power dissipation is 33 W, the voltage source-drain 650, drain current 11 A HULL TYPE TO-220F, CLASSIFICATION CODE 3417831 is for use in SMPS converts | *** | KOREA REPUBLIC OF | 0.01 | 5,02 | *** | ***** | ***** |
2017-09-15 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation 2.5W, DRAIN-SOURCE VOLTAGE 60 V, the drain current of 1.4 A HULL TYPE SOT-223, 6,340,128 CLASSIFICATION CODE FOR PCB RADIO EQUIPMENT DIODES , INC. DI | *** | KOREA REPUBLIC OF | 0 | 10,61 | *** | ***** | ***** |
2017-09-15 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation of 2.5 W, the voltage source-drain 100 V, the drain current 4.5 A HULL TYPE 8-SOIC, CLASSIFICATION CODE 6,340,128, is intended for mounting on printed circuit boards RADIO EQUIPMENT ON | *** | KOREA REPUBLIC OF | 0 | 9,35 | *** | ***** | ***** |
2017-09-19 | 8541290000 | Transistors, EXCEPT phototransistor used in the system of industrial electronics MOSFET with a channel type N for single hole mounting on a printed circuit board adapted for devices of industrial electronics. The breakdown voltage of the drain-source 60 | *** | KOREA REPUBLIC OF | 2.18 | 765,49 | *** | ***** | ***** |
2017-09-19 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, dissipated power 190 W, the voltage source-drain 60, the drain current of 50 A, TYPE BODY TO-263, CODE OKP 3417831 is for use in switching power supply, transformation | *** | KOREA REPUBLIC OF | 0.06 | 298,41 | *** | ***** | ***** |
2017-09-26 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MOS TRANSISTOR NUMBER CHANNEL 1 CHANNEL Transistor Polarity: N-CHANNEL VDS - breakdown voltage of the drain-source 40 V ID - CONSTANT CURRENT LEAKS: 100 A RDS ON - Resistance Drain-1 MOHMS VGS TH - THRESHOLD | *** | KOREA REPUBLIC OF | 1.35 | 3968,08 | *** | ***** | ***** |
2017-09-26 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MOS TRANSISTOR NUMBER CHANNEL 1 CHANNEL Transistor Polarity: P-CHANNEL VDS - breakdown voltage of the drain-source - 60 V ID - CONSTANT CURRENT LEAKS: - 14 A RDS ON - resistance of the drain-source 52 MOHMS SLOPE the Features | *** | KOREA REPUBLIC OF | 3.65 | 7672,13 | *** | ***** | ***** |
2017-09-28 | 8541290000 | MOSFET TYPE SEMICONDUCTOR - silicon is used in the power supply TFT panels: POWER TRANSISTOR IRF7416PBF- THIS SINGLE P-channel HEXFET MOSFET HOUSING SO-8, the maximum drain-source voltage - 30 V, the range of nominal ON | *** | KOREA REPUBLIC OF | 0.27 | 220,12 | *** | ***** | ***** |