DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0.02 | 23,62 | *** | ***** | ***** |
2017-09-06 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0 | 8,45 | *** | ***** | ***** |
2017-09-06 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0.04 | 96,02 | *** | ***** | ***** |
2017-09-08 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MAXIMUM MOSFET drain-source voltage USI, B: 400 MAX CURRENT DRAIN-SOURCE WITH ISI MAX 25 C, A:. 10, the maximum gate-source voltage UZI MAX, V:. 30 RESISTANCE IN OPEN CHANNEL STATE BK RSI | *** | MALAYSIA | 9.56 | 844,33 | *** | ***** | ***** |
2017-09-12 | 8541290000 | TRANSISTOR DESIGNED FOR USE IN telecommunications equipment for mounting on circuit boards P-channel MOS KEY maximum constant drain-source voltage 12V, the maximum drain current is 16A, the power of 2.5 W, SOIC-8 BODY TEMPERATURE RANGE - | *** | MALAYSIA | 2.17 | 5460,82 | *** | ***** | ***** |
2017-09-14 | 8541290000 | Modules insulated-gate bipolar transistor (IGBT) "FF600R12ME4" With powerful. DISPERSION 4050 W, collector-emitter voltage 1200V, gate-emitter voltage 20V. TYPE SEMICONDUCTOR SILICON. : INTENDED FOR USE IN HIGH POWER PRE | *** | MALAYSIA | 41.5 | 11097,73 | *** | ***** | ***** |
2017-09-20 | 8541290000 | TRANSISTORS SILICON C dissipation 1 W FOR VARIOUS RADIO AND ELECTRICAL PURPOSE, bipolar NPN silicon transistors, voltage 80V, N-RASSEIVANIYA1,5VT POWER CHANNEL TIR silicon transistors VOLTAGE 40V, M | *** | MALAYSIA | 7.11 | 2799 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Silicon Transistors C Power Dissipation 1 W FOR ELECTRONICS AND ELECTRICAL EQUIPMENT FOR VARIOUS PURPOSES, bipolar NPN silicon transistors, voltage 45V, power dissipation 4,6VT BIPOLAR NPN silicon transistors, voltage 50V, M | *** | MALAYSIA | 7.76 | 4341 | *** | ***** | ***** |
2017-09-20 | 8541290000 | SEMICONDUCTOR TRANSISTORS: SEMICONDUCTOR insulated-gate bipolar transistor, the dissipated power 125 W, a current of 20 A, MAX. VOLTAGE KOLLEKTR emitter 430 B, CLASSIFICATION CODE 3417810 is intended for use in pulsed sources Pete | *** | MALAYSIA | 0.86 | 549,7 | *** | ***** | ***** |
2017-09-20 | 8541290000 | SEMICONDUCTOR TRANSISTORS: PNP bipolar transistor structure, the power dissipation of 1.5 W, CURRENT 1.5 A TYPE OF BODY SOT-223, collector-emitter voltage 80 V CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT FIELD MOS | *** | MALAYSIA | 0.85 | 490,03 | *** | ***** | ***** |