DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: SEMICONDUCTOR MODULE insulated-gate bipolar transistor, power dissipation is 60 watts, collector-emitter voltage of 600 V, 19 A CURRENT CODE OKP 3,417,810, INTENDED FOR USE IN pulse source PI | *** | THAILAND | 0.21 | 225,01 | *** | ***** | ***** |
2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET P-CHANNEL, power dissipation 65W VOLTAGE source-drain 60, the drain current of 15.5 A, TYPE BODY TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply, CONVERTING | *** | THAILAND | 0.92 | 92,69 | *** | ***** | ***** |
2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: NPN bipolar transistor structure, the power dissipation of 1.75 BT current 6 A Housing type TO-252-3, collector-emitter voltage 100 V CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT ON SEMICOND | *** | THAILAND | 0.05 | 35,88 | *** | ***** | ***** |
2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: DOUBLE MOSFET N-CHANNEL, power dissipation 2.5W, DRAIN-SOURCE VOLTAGE 30 V, the drain current of 40 A, HULL TYPE PG-TISON-8 CLASSIFICATION CODE 3417831 is for use in SMPS | *** | THAILAND | 3.59 | 363,7 | *** | ***** | ***** |
2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation of 36 W, the voltage source-drain 60, drain current 46 A HULL TYPE TDSON-8 CLASSIFICATION CODE 3417831 is for use in switching power supply, transformation | *** | THAILAND | 0.02 | 52,34 | *** | ***** | ***** |
2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power of 1 W, the voltage source-drain 30, the drain current of 30 A, HULL TYPE 8QFN, CLASSIFICATION CODE 3417831 is for use in switching power supply, CONVERTER | *** | THAILAND | 1.02 | 2439,27 | *** | ***** | ***** |
2017-09-19 | 8541290000 | FET power dissipation BT 375, the source-drain VOLTAGE 150V, SEMICONDUCTOR - SILICON FOR LOGIC CIRCUITS ARE TO CONTROL PARAMETERS OF ENERGY,: INFINEON TECHNOLOGIES INFINEON TECHNOLOGIES, CHINA IPT059N15N | *** | THAILAND | 0.01 | 117,52 | *** | ***** | ***** |
2017-09-25 | 8541290000 | TRANSISTOR. MODEL "IRFS4610TRLPBF" -33 pcs. The product is a field-effect transistor power dissipation of 190 watts and a voltage between the source-drain to 100 volts. Is designed in surface mount package. Information on the type: semiconductor | *** | THAILAND | 0.06 | 88,72 | *** | ***** | ***** |
2017-09-25 | 8541290000 | TRANSISTOR. MODEL "IRFS52N15DPBF" -41 pcs. The product is a field effect transistor with the maximum power DISPERSION to 320 watts and a voltage between the source-drain to 150 volts. Is designed in surface mount package. : SUPPLIED | *** | THAILAND | 0.11 | 81,05 | *** | ***** | ***** |
2017-09-27 | 8541290000 | Transistors, EXCEPT phototransistor used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 80 V, maximum collector current 1 A. CASE SOT-89-3. power dissipation | *** | THAILAND | 0.05 | 8,7 | *** | ***** | ***** |