DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-01 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 64 Mbit is approved for use in telecommunications equipment. supply voltage | *** | MALAYSIA | 0.01 | 481,99 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH Memory capacity of 1 Mbit is approved for use in telecommunications equipment. supply voltage | *** | MALAYSIA | 0.06 | 58,51 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 2 Mbit is approved for use in telecommunications equipment. supply voltage | *** | MALAYSIA | 0.27 | 258,43 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 2 Mbit is approved for use in telecommunications equipment. supply voltage | *** | MALAYSIA | 0.05 | 164,67 | *** | ***** | ***** |
2017-09-13 | 8542326100 | FLASH electrically erasable programmable read only memory device with memory capacity 32MBIT SYSTEMS industrial electronics for voltage 2.7 ... 3.6V, the chip flash memory MOD.MX25L3206EM2I-12G-300SHT; Packed in SPETS.UPAKOVKU NOT D: LA | *** | MALAYSIA | 0.3 | 139,5 | *** | ***** | ***** |
2017-09-14 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, is a memory of 2 MBIT is approved for use in telecommunications equipment. Voltage from 2 to 3.6 | *** | MALAYSIA | 1.5 | 7932,59 | *** | ***** | ***** |
2017-09-14 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, is a memory designed for use in telecommunications equipment. Supply voltage from 2.7 to 3.6 V, O | *** | MALAYSIA | 0.06 | 224,62 | *** | ***** | ***** |
2017-09-14 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH MEMORY is approved for use in telecommunications equipment. VOLUME 4 MBIT, supply voltage | *** | MALAYSIA | 0.06 | 317,79 | *** | ***** | ***** |
2017-09-15 | 8542326100 | FLASH EPROM ES with a storage capacity to 512 MBIT: IC - Flash memory SER. CONFIG MEM FLASH 1.6MB 10 MHZ, MEMORY - 1.6 MBIT, the maximum operating frequency - 10 MHZ, OPERATING VOLTAGE - 3.3 V, 5 V, the minimum operating temperature - - 40 | *** | MALAYSIA | 1.12 | 820,96 | *** | ***** | ***** |
2017-09-20 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 64 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | MALAYSIA | 6.7 | 8200 | *** | ***** | ***** |