DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 30.72 | 56860,8 | *** | ***** | ***** |
2017-09-01 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 33.28 | 61599,2 | *** | ***** | ***** |
2017-09-01 | 8542323900 | MICROCHIP electronic integrated monolithic, dynamic random access memory (DRAM) with a storage capacity of 4 GB which do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP elect., For the promo. ASSEMBLY TECHNOLOGY "SAMSUNG" Microcircuits integrated MES | *** | KOREA REPUBLIC OF | 47.2 | 62423,07 | *** | ***** | ***** |
2017-09-01 | 8542323900 | MICROCHIP Electronic integrated circuits, monolithic (dynamic random access memory (DRAM) with a storage capacity of 2 Gbit having no encryption function (CRYPTOGRAPHY) NOT SCRAP Electrics., For the industrial assembly EQUIPMENT "SAMSUNG" Integrated Circuits | *** | KOREA REPUBLIC OF | 20 | 112520,48 | *** | ***** | ***** |
2017-09-02 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with memory volume to 4 GB, a maximum frequency of 12 | *** | CHINA | 0.11 | 149,6 | *** | ***** | ***** |
2017-09-02 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity to 16 GB, the maximum operating frequency of 6 | *** | CHINA | 0.76 | 2362,5 | *** | ***** | ***** |
2017-09-02 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of 2 GB to, a maximum frequency of 40 | *** | CHINA | 0.06 | 231 | *** | ***** | ***** |
2017-09-02 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of 2 GB to, maximum operating frequency of 13 | *** | CHINA | 0.01 | 18 | *** | ***** | ***** |
2017-09-02 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with memory volume to 4 GB maximum frequency of 80 | *** | UNITED STATES | 1.73 | 1800 | *** | ***** | ***** |
2017-09-02 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE: Integrated circuits, monolithic, is a dynamic random access memory (DRAM) with a storage capacity to 2 MB, a maximum frequency of 800 | *** | UNITED STATES | 0.52 | 270 | *** | ***** | ***** |