DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): XILINX INC XILINX B / N XCF04SVO20C B / 24 H | *** | CHINA | 0 | 193,49 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity 8Mbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT TRADEMARK B / N S29AL008J70TF | *** | CHINA | 0.01 | 39,07 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): ALTERA CORPORATION ALTERA B / B EPCS4SI8N H / H 5 | *** | MALAYSIA | 0.08 | 188,51 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) with a storage capacity of 16 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): ALTERA CORPORATION ALTERA B / N EPCS16SI8N B / N | *** | MALAYSIA | 0.02 | 503,88 | *** | ***** | ***** |
2017-09-01 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT / NOT JOM ELECTRICAL NOT CONTAIN ENCRYPTION AND FUNCTIONS KRITOGRAFII / MICROCIRCUIT MONOLITHIC INTEGRATED ELECTRONIC FLASH EPROM, 8M CAPACITY * 8bit input voltage 1.8 / 3.3V SAMSUNG ELECTRONICS C | *** | UNITED STATES | 0.64 | 1929,52 | *** | ***** | ***** |
2017-09-01 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT / NOT JOM ELECTRICAL NOT CONTAIN ENCRYPTION AND FUNCTIONS KRITOGRAFII / MICROCIRCUIT MONOLITHIC INTEGRATED ELECTRONIC FLASH EEPROM MEMORY, 128 MB, VOLTAGE 2.7-3.6V INTEL INC. INTEL INTEL | *** | UNITED STATES | 0.64 | 1296,22 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 64 Mbit is approved for use in telecommunications equipment. supply voltage | *** | MALAYSIA | 0.01 | 481,99 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH Memory capacity of 1 Mbit is approved for use in telecommunications equipment. supply voltage | *** | MALAYSIA | 0.06 | 58,51 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 2 Mbit is approved for use in telecommunications equipment. supply voltage | *** | MALAYSIA | 0.27 | 258,43 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH MEMORY CAPACITY 1.6 MBIT is approved for use in telecommunications equipment. LIVE PIT | *** | MALAYSIA | 0.05 | 73,86 | *** | ***** | ***** |