DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326900 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 8192MEGABIT for wide application in industrial equipment NOT WAR H | *** | CHINA | 0.01 | 101,68 | *** | ***** | ***** |
2017-09-01 | 8542326900 | CHIPS-electronic integrated storage devices that do not have the encryption function (CRYPTOGRAPHY) without encryption (cryptographic) means, FLASH EPROM ES With Memory Capacity 4GB NOT NOT SCRAP ELECTRIC, FOR INDUSTRIAL MEMORY MODULE | *** | KOREA REPUBLIC OF | 22.85 | 48596,41 | *** | ***** | ***** |
2017-09-01 | 8542326900 | CHIPS-electronic integrated storage devices that do not have the encryption function (CRYPTOGRAPHY) without encryption (cryptographic) means, FLASH EPROM ES With Memory Capacity 4GB NOT NOT SCRAP ELECTRIC, FOR INDUSTRIAL MEMORY MODULE | *** | KOREA REPUBLIC OF | 131.71 | 179119,96 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 128 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.02 | 39,6 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 32 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.09 | 90 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | UNITED STATES | 0.06 | 32,5 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 32 GB is approved for use in telecommunications equipment. supply voltage | *** | MALAYSIA | 0.04 | 175,83 | *** | ***** | ***** |
2017-09-03 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory DEVICE | *** | CHINA | 1.02 | 2807,42 | *** | ***** | ***** |
2017-09-05 | 8542326900 | Electronic integrated circuits, electrically erasable programmable read-only memory (EEPROM), for applications in microelectronics: chip flash memory 1.8V 1G-BIT MICRON TECHNOLOGY INC. 172 MICRON MICRON PC28F00AP30TFA | *** | CHINA | 0.84 | 1189,96 | *** | ***** | ***** |
2017-09-05 | 8542326900 | Electronic integrated circuits: flash memory (flash-ES PROM), 2 GB, voltage 3.6 V, current 30 mA, SAMSUNG ELECTRO-MECHANICS SAMSUNG ELECTRO-MECHANICS, KOREA, REPUBLIC OF SAMSUNG ELECTRO-MECHANICS, Korea, Republic of K9K8G08U0M-PIB0 MEMORY 20 | *** | CHINA | 0.01 | 174,35 | *** | ***** | ***** |